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用于大面积周期性图形制造的激光干涉光刻
引用本文:张锦,冯伯儒,郭永康,蒋世磊,宗德蓉,杜惊雷,曾阳素,高福华.用于大面积周期性图形制造的激光干涉光刻[J].光电工程,2001,28(6):20-23.
作者姓名:张锦  冯伯儒  郭永康  蒋世磊  宗德蓉  杜惊雷  曾阳素  高福华
作者单位:1. 中国科学院光电技术研究微细加工光学技术国家重点实验室,四川,成都,610209;四川大学物理系,四川,成都,610064
2. 中国科学院光电技术研究微细加工光学技术国家重点实验室,四川,成都,610209
3. 四川大学物理系,四川,成都,610064
基金项目:国家自然科学基金(60076019)资助项目,中国科学院光电技术研究所微细加工光学技术国家重点实验室开放基金课题,四川大学青年科学基金资助项目
摘    要:用两束或多束相干激光束以不同的组合形式对光致抗蚀剂曝光,可在大面积范围内产生精细的二维周期性图形,这个方法特别适合于产生光电子器件和生电子器件的周期性结构。介绍激光干涉光刻的基本原理,对几种光束组合干涉方法给出了理论推导结果,并进行了计算机模拟。初步的实验结果表明,用激光干扰光刻技术产生大面积的亚微米级周期性孔、柱、锥图形是可行的。该方法不需要掩模、昂贵的光刻成像透镜、新的短波长光源和新型的抗蚀剂,提供了得到高分辨、无限焦深、大面积光刻的可能性。

关 键 词:干涉光刻  激光干涉  计算机模拟  周期性图形制造
文章编号:1003-501X(2001)06-0020-04
修稿时间:2001年9月4日

Laser Interference Photolithography for Fabricating Periodic Patterns in Large Area
ZHANG Jin,FENG Bo-ru,GUO Yong-kang,JIANG Shi-lei,ZONG De-rong,DU Jing-lei,ZENG Yang-su,GAO Fu-hua.Laser Interference Photolithography for Fabricating Periodic Patterns in Large Area[J].Opto-Electronic Engineering,2001,28(6):20-23.
Authors:ZHANG Jin    FENG Bo-ru  GUO Yong-kang  JIANG Shi-lei  ZONG De-rong  DU Jing-lei  ZENG Yang-su  GAO Fu-hua
Affiliation:ZHANG Jin1,2,FENG Bo-ru2,GUO Yong-kang1,JIANG Shi-lei2,ZONG De-rong2,DU Jing-lei1,ZENG Yang-su1,GAO Fu-hua1
Abstract:The fine 2-D periodic patterns can be generated in large area by two or more coherent laser beams to expose the photo-resist simultaneously or multiply. This method is especially suitable for generation of periodic patterns of opto-electronic devices and micro-electronic devices. The basic principle of laser interference photolithography is introduced in the paper. The theoretical derivative results for several beam combined interference methods are given and the computer simulation is carried out. The initial experimental results show that generation of sub-micron level periodic hole, column and cone patterns in large area by means of laser interference photolithographic technique is feasible. The method does not need mask , expensive photolithographic imaging lens, new light source with short wavelength and novel resist, and it provides a probability for achieving high-resolution and infinite focal depth photolithography in large area.
Keywords:
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