BN薄膜的制备及BPXN1-X薄膜的紫外光敏特性

采用热丝和射频等离子体辅助化学气相沉积方法(HF-PECVD),以单晶硅为衬底在低温(< 500℃)条件下沉积氮化硼(BN)薄膜材料.通过傅立叶变换红外光谱(FTIR)、 X射线衍射(XRD)及扫描电镜(SEM)对薄膜样品的组成和结构进行了分析,探讨了温度和等离子体对沉积BN薄膜的影响.此外,用紫外-可见光分光光度计(UV)测试了石英衬底上生长磷掺杂氮化硼(BPXN1-X)薄膜样品的紫外吸收特征,分析了磷掺杂对 BN光学能隙的调节作用以及 BPXN1-X薄膜在紫外空间探测领域的应用前景.结果表明,以单晶硅和光学石英玻璃为衬底在低温条件下用 HF-PECVD方法可以沉积较高质量的 BN薄膜,BN的光学能隙宽度通过磷的掺杂可以得到连续调节,在紫外空间光探测领域具有很大的应用潜力.

Deposition of BN thin films and ultraviolet absorbance characteristics of BPxN1-x thin films

Boron nitride thin films were deposited on monocrystalline silicon polished wafer substrate by using hot- filament and RF plasma enhanced chemical vapour technique (HF- PECVD) at low tem- perature. Measurements of Fourier Infrared Spectrum (FTIR),X- ray diffraction (XRD) and Scanning Electron Microscopy (SEM) were performed to study the structure of thin films. The effects of tem- perature and RF power on the deposition of BN thin films were discussed. In addition, the ultraviolet absorbance characteristics of BN thin films and ternary compound BPXN1- X thin films deposited on quarts glass polished wafer substrates were also investigated by U- V absorption spectra, and the optical bandgap modulation of BN by phosphorus was discussed. The results show that high quality BN thin films are obtained by using HF- PECVD at low temperature. And the optical bandgap of BN can be modulated continuously by addition of phosphorus, which infers that BPxN1- x thin films will have a good potential application for ultraviolet band detecting.