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| 温度梯度和生长速率对CdZnTe-VBM生长晶体的影响 | |
| 引用本文： | 刘俊成,王佩,郭喜平,介万奇.温度梯度和生长速率对CdZnTe-VBM生长晶体的影响[J].功能材料与器件学报,2003,9(3):277-284. |
| 作者姓名： | 刘俊成 王佩 郭喜平 介万奇 |
| 作者单位： | 1. 山东理工大学材料科学与工程学院,淄博,255091 2. 西北工业大学材料科学与工程学院,西安,710072 |
| 基金项目： | 国家自然科学基金(No.50006016)，山东省自然科学基金(No.Y2000G07)资助 |
| 摘 要： | 计算模拟了半导体材料CdZnTe垂直布里奇曼法(CdZnTe-VBM)单晶体生长过程，分析了炉膛温度梯度和坩埚移动速率对结晶界面形态和晶体内组份偏析的影响。计算结果表明炉膛温度梯度和生长速率的变化明显影响固-液界面前沿对流场的形态和强度。界面凹陷深度随着炉膛温度梯度的增加和生长速率减小而减小。炉膛温度梯度的增加和生长速率的减小虽然均能有效的减小径向偏析，但却增加轴向偏析，减小轴向等浓度区的长度。 |
| 关 键 词： | 半导体材料 CdZnTe 垂直布里奇曼法 晶体生长 温度梯度 生长速率 数值模拟 溶质偏析 传热传质 |
| 文章编号： | 1007-4252(2003)03-0277-08 |
| 修稿时间： | 2003年2月18日 |
Influences of temperature gradient and growth rate on CdZnTe crystal grown by VBM |
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| LIU Jun- cheng,WANG Pei,GUO Xi- ping,JIE Wan- qi.Influences of temperature gradient and growth rate on CdZnTe crystal grown by VBM[J].Journal of Functional Materials and Devices,2003,9(3):277-284. | |
| Authors: | LIU Jun- cheng WANG Pei GUO Xi- ping JIE Wan- qi |
| Affiliation: | LIU Jun- cheng1,WANG Pei2,GUO Xi- ping2,JIE Wan- qi2 |
| Abstract: | CdZnTe single crystal growth process with vertical Bridgman method was modeled. The influences of temperature gradient and growth rate were investigated on solid- liquid interface and solute segregation of CdZnTe crystal. It shows that both temperature gradient and growth rate can change the pattern and the intensity of the convection in the melt near the solid- liquid interface significantly.With the increase of temperature gradient and the decrease of the growth rate, the concavity of the solid- liquid interface decreases a lot, the radial solute segregation of the crystal improves appreciably, the iso- concentration lines is nearly parallel to the radial. On the contrary, the axial solute segregation is enhanced, the length of the axial iso- concentration zone reduces obviously. |
| Keywords: | solute segregation heat and mass transportation crystal growth convection numerical |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |