| PIN结构GaInAsSb红外探测器的PSPICE模型 |
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| 引用本文： | 李志怀,夏冠群,程宗权,黄文奎,伍滨和.PIN结构GaInAsSb红外探测器的PSPICE模型[J].功能材料与器件学报,2003,9(1):34-38. |
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| 作者姓名： | 李志怀 夏冠群 程宗权 黄文奎 伍滨和 |
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| 作者单位： | 中国科学院上海微系统与信息技术研究所,上海,200050 |
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| 基金项目： | 国家自然科学基金资助(No.60176011) |
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| 摘 要： | 研究了PIN结构GaInAsSb红外探测器的暗电流特性，建立了器件的PSPICE模型。模拟结果与实际测试结果基本符合。计算结果表明，器件表面和内部的缺陷及表面复合电流对器件的反向特性起主要作用，当反向偏压大于0.35V，缺陷引起的隧穿电流对器件暗电流起主要作用。
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| 关 键 词： | GaInAsSb 红外控制器 PSPICE |
| 文章编号： | 1007-4252(2003)01-0034-05 |
| 修稿时间： | 2002年5月10日 |
PSPICE model of GaInAsSb infrared detectors with PIN structure |
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| LI Zhi-huai,XIA Guan-qun,CHENG Zong-quan,HUANG Wen-kui,WU Bin-he.PSPICE model of GaInAsSb infrared detectors with PIN structure[J].Journal of Functional Materials and Devices,2003,9(1):34-38. |
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| Authors: | LI Zhi-huai XIA Guan-qun CHENG Zong-quan HUANG Wen-kui WU Bin-he |
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| Abstract: | Dark current of GaInAsSb Detectors with PIN structure was studied, and PSPICE model ofthe devices was set up. Simulated results coincide with tested results. Calculation shows that the elements dominated reverse characteristics of the devices are G-R current and surface recombinationcurrent, and when the reverse voltage is higher than 0.35V, trap assisted tunneling current dominatesdark current of the devices. |
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| Keywords: | GaInAsSb infrared detector PSPICE |
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