| 具有高电流处理能力的多发射极条微波功率GeSi HBT |
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| 引用本文： | 沈珮,张万荣,谢红云,金冬月,李佳,甘军宁.具有高电流处理能力的多发射极条微波功率GeSi HBT[J].功能材料与器件学报,2009,15(1). |
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| 作者姓名： | 沈珮 张万荣 谢红云 金冬月 李佳 甘军宁 |
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| 作者单位： | 北京工业大学电子信息与工程控制学院,北京,100124 |
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| 基金项目： | 国家自然科学基金，北京市自然科学基金，北京市教委科技发展计划，北京市属市管高校中青年骨干教师培养计划项目，北京市优秀跨世纪人才基金 |
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| 摘 要： | 本文对多发射极条(指)微波功率GeSi HBT进行了设计、制造和测试,并就测试结果对电流处理能力进行了研究.实验结果表明,对20～80指的GeSi HBT,发射极单位长度的电流密度I0在1.67～1.06A/cm之间变化.随发射极条数的增加,I0逐渐减少,分析认为这是由发射极条之间的热耦合引起有源区的温度非均匀分布而导致的.并且通过测试所得到的I0值,证明多指GeSi HBT可通过选择合适的发射极条数、条长和发射区面积获得更高的电流处理能力.
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| 关 键 词： | 锗硅异质结双极晶体管 热耦合效应 电流处理能力 |
Multiple emitter-finger microwave power GeSi HBT with large current-handling capability |
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| SHEN Pei,ZHANG Wan-rong,XIE Hong-yun,JIN Dong-yue,LI Jia,GAN Jun-ning.Multiple emitter-finger microwave power GeSi HBT with large current-handling capability[J].Journal of Functional Materials and Devices,2009,15(1). |
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| Authors: | SHEN Pei ZHANG Wan-rong XIE Hong-yun JIN Dong-yue LI Jia GAN Jun-ning |
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| Affiliation: | School of Electronic Information and Control Engineering;Beijing University of Technology;Beijing 100124;China |
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| Abstract: | Multi-finger microwave power GeSi HBT were designed and fabricated.The current handling capability was studied through testing the emitter current densities.Experimental results show that the emitter current linear density of unit perimeter(I0)varies from 1.67 to 1.06 A/cm for GeSi HBT with 20 to 80 emitter fingers.As the emitter fingers increasing,I0 reduces which result from non-uniform temperatures profile on emitters led by thermal coupling among emitter-fingers.The results benchmarks the GeSi HBT could... |
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| Keywords: | GeSi HBT the thermal coupling effect the current handing capability |
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