| 基于多掩膜光刻工艺的MEMS体硅加工 |
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| 引用本文： | 黄占喜,吴亚明,李四华.基于多掩膜光刻工艺的MEMS体硅加工[J].功能材料与器件学报,2011,17(3). |
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| 作者姓名： | 黄占喜 吴亚明 李四华 |
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| 作者单位： | 中科院上海微系统与信息技术研究所微系统技术重点实验室传感技术联合国家重点实验室;中科院研究生院; |
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| 基金项目： | 国家高技术研究发展计划(863计划)(2008AA03Z406,2009AA03Z443); 自然科学基金(60877066) |
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| 摘 要： | 本文提出了一种新颖的MEMS多掩膜工艺,实现了带有大台阶和大深宽比窄槽的衬底上的体硅精细加工。通过薄胶多次光刻在衬底上制作出氧化硅(SiO2)、氮化硅(Si3N4)、光刻胶(photo-resist,PR)等材料的多层掩膜图形,每层掩膜可以进行一次衬底刻蚀或腐蚀,刻蚀或腐蚀完毕后去除该层掩膜。该工艺解决了MEMS工艺中的深坑涂胶和光刻问题,结合深反应离子刻蚀(Deep Re-active Ion Etching,DR IE)、湿法腐蚀等工艺可以用于多级台阶、深坑底部精细结构、微结构释放等MEMS工艺。
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| 关 键 词： | MEMS 光刻 多掩膜 体硅工艺 |
MEMS Bulk Silicon Process Based On Multi-mask Photolithograph |
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| HUANG Zhan-xi,WU Ya-ming,LI Si-hua.MEMS Bulk Silicon Process Based On Multi-mask Photolithograph[J].Journal of Functional Materials and Devices,2011,17(3). |
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| Authors: | HUANG Zhan-xi WU Ya-ming LI Si-hua |
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| Affiliation: | HUANG Zhan-xi1,2,WU Ya-ming1,LI Si-hua1,2(1.Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Microsystem and Technology Laboratory,State Key Laboratory of Transducer Technology,Shanghai 200050,2.Graduate School of the Chinese Academy of Sciences,Beijing,China 10003) |
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| Abstract: | In this paper,a novel MEMS multi-mask process for precision bulk silicon process with big steps and big aspect trench was proposed.After repeated thin photoresist(PR) photolithograph on substrate,multi-mask layer included SiO2/ Si3N4/PR with different graph were created.Each layer can be used for substrate etching and can be removed after etching.This process solved the problem of PR coating and photolithograph on substrate with deep pits and trenches in MEMS device fabrication.Combined with Deep Reactive I... |
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| Keywords: | MEMS photolithograph multi-mask bulk silicon process |
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