A hybrid superconductor/GaAs-MESFET microwave oscillator at 10.6 GHz |
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| Authors: | BB Jin RX Wu L Kang QH Cheng PH Wu D Jing K Shao MM Jiang JZ Zhang MS Sun YY Wang YL Zhou HB Lu SF Xu M He |
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| Affiliation: | aDepartment of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;bCenter for Advanced Studies in Science and Technology of Microstructures, Nanjing University, 210093 Nanjing, China;cAlso at Department of Radio Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;dNanjing Electronic Device Institute, Nanjing 210016, China;eState key Laboratory of Millimeter Waves, Southeast University, Nanjing 210096, China;fInstitute of Physics, Chinese Academy of Sciences, Beijing 100080, China |
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| Abstract: | A 10.6 GHz hybrid superconducting film/GaAs-MESFET microwave oscillator has been designed, fabricated and characterized on a 10 mm × 15 mm LaAlO3 substrate. The oscillator was a reflection mode type using a GaAs MESFET (NE72084) as the active device and a superconducting microstrip resonator as the frequency stabilizing element. By improving the unloaded quality factor of the superconducting microstrip resonator and adjusting coupling coefficient between the resonator and the MESFET, the phase noise of the oscillator was decreased. At 77 K, the phase noise of the oscillator at 10 KHz offset from carrier was −87 dBc/Hz. |
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| Keywords: | YBaCuO superconducting microstrip resonator microwave oscillator |
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