Surface integrity and removal mechanism in grinding sapphire wafers with novel vitrified bond diamond plates

In order to improve machining efficiency of sapphire wafer machining using the conventional loose abrasive process, fixed-abrasive diamond plates are investigated in this study for sapphire wafer grinding. Four vitrified bond diamond plates of different grain sizes (40?µm, 20?µm, 7?µm, and 2.5?µm) are developed and evaluated for grinding performance including surface roughness, surface topography, surface and subsurface damage, and material removal rate (MRR) of sapphire wafers. The material removal mechanisms, wafer surface finish, and quality of the diamond plates are also compared and discussed. The experiment results demonstrate that the surface material is removed in brittle mode when sapphire wafers are ground by the diamond plates with a grain size of 40?µm and 20?µm, and in ductile mode when that are ground by the diamond plates of grain sizes of 7?µm and 2.5?µm. The highest MRR value of 145.7?µm/min is acquired with the diamond plate with an abrasive size of 40?µm and the lowest surface roughness values of 3.5?nm in Ra is achieved with the 2.5?µm size.