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导电聚合物MEH-PPV表面光电特性的研究
引用本文:黄宗浩,孙海珠,张文,杨继华.导电聚合物MEH-PPV表面光电特性的研究[J].材料科学与工艺,2003,11(4):383-385.
作者姓名:黄宗浩  孙海珠  张文  杨继华
作者单位:东北师范大学,化学学院,吉林,长春,130024
基金项目:吉林省科技厅科技发展计划,2002618,
摘    要:用接触电位差(CPD)方法研究了导电聚合物MEH-PPV薄膜的光电特性,测得MEH-PPV的能隙为2.1eV,表面功函数为4.7-4.8eV,是p型导电材料,同时研究了不同铸膜溶剂对薄膜光电特性的影响,测得由不含芳环的四氢呋喃为溶剂制得的薄膜表面功函数比由含芳环的氯苯为溶剂制得的薄膜低0.15eV。

关 键 词:接触电位差法  CPD  导电聚合物  光电特性  四氢呋喃
文章编号:1005-0299(2003)04-0383-03
修稿时间:2001年9月25日

Surface photoelectric characteristics of conducting polymer MEH-PPV
HUANG Zong-hao,SUN Hai-zhu,ZHANG Wen,YANG Ji-hua.Surface photoelectric characteristics of conducting polymer MEH-PPV[J].Materials Science and Technology,2003,11(4):383-385.
Authors:HUANG Zong-hao  SUN Hai-zhu  ZHANG Wen  YANG Ji-hua
Abstract:The photoelectric characteristics of conducting polymer MEH-PPV thin film were studied using contact potential difference (CPD) method. The energy gap and the surface work function (SWF) of MEH-PPV thin film were determined as 2.1 eV and 4.7-4.8 eV, respectively; and the p-type conducting characteristic of film was determined, too. Meanwhile the influence of different coating solvents on photoelectric characteristic of thin film was investigated, and the result indicates that the SWF of film coated from tetrahydrofuran (THF) is 0.15 eV lower than that from chlorobenzne (CB) solution.
Keywords:photovoltaic materials  MEH-PPV  contact potential difference  surface work function
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