| 微波烧结、真空压力浸渗制备SiCp/Al电子封装材料 |
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| 引用本文： | 胡盛青,万绍平,刘韵妍,舒阳会,谭春林.微波烧结、真空压力浸渗制备SiCp/Al电子封装材料[J].材料科学与工艺,2012,20(1):78-82,77. |
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| 作者姓名： | 胡盛青 万绍平 刘韵妍 舒阳会 谭春林 |
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| 作者单位： | 湖南航天高新材料与装备技术研发中心，湖南长沙410205;湖南航天高新材料与装备技术研发中心，湖南长沙410205;湖南航天诚远精密机械有限公司，湖南长沙410205;湖南航天高新材料与装备技术研发中心，湖南长沙410205;湖南航天高新材料与装备技术研发中心，湖南长沙410205 |
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| 基金项目： | 湖南省长沙市科技计划重点项目(K1003264-11). |
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| 摘 要： | 选用W10与W63两种SiC粉末,采用高、低温粘结剂配合,模压成型,750℃微波烧结,制备出体积分数为70.28%的SiC预制件,真空压力浸渗6063Al合金熔液,得到SiCp/Al复合材料.结果表明:复合材料XRD图谱中未出现明显的Al4C3界面相和SiO2杂相;致密度高;100℃时的热膨胀系数为7.239×10-6K-1;常温下热导率为160.42/W(m.K)-1;4mm×3mm×30mm规格样品的最大弯曲载荷为282N,弯曲位移为0.29mm左右;综合性能优良,是优异的电子封装材料.
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| 关 键 词： | 微波烧结 真空压力浸渗 SiCp/Al |
| 收稿时间： | 6/2/2011 12:00:00 AM |
SiCp/Al composites for electronic packaging prepared by microwave sintering and vacuum pressure infiltration |
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| HU Sheng-qing,WAN Shao-ping,LIU Yun-yan,SHU Yang-hui and TAN Chun-lin.SiCp/Al composites for electronic packaging prepared by microwave sintering and vacuum pressure infiltration[J].Materials Science and Technology,2012,20(1):78-82,77. |
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| Authors: | HU Sheng-qing WAN Shao-ping LIU Yun-yan SHU Yang-hui and TAN Chun-lin |
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| Affiliation: | High-tech material and equipment and technology R&D Center of Hunan Aerospace,Changsha 410205,China;High-tech material and equipment and technology R&D Center of Hunan Aerospace,Changsha 410205,China;Chengyuan Precision Machinery Co.,Ltd of Hunan Aerospace,Changsha 410205,China;High-tech material and equipment and technology R&D Center of Hunan Aerospace,Changsha 410205,China;High-tech material and equipment and technology R&D Center of Hunan Aerospace,Changsha 410205,China |
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| Abstract: | The SiCp/Al composites with volume fraction 70.28% were fabricated by compression molding,750℃ Microwave Sintering and Vacuum Pressure Infiltration with W10 and W63 two kinds of SiC powder,6063 Al Alloy and high temperature adhesive combined with low temperature adhesive.The results show that there are no obvious Al4C3 interphase and impurity phase like SiO2 in the XRD pattern of the composites with high relative density and its Thermal Expansion Coefficient is 7.239×10-6K-1 at 100℃,the Thermal Conductivity is 160.42/W(m·K)-1 at normal temperature,the maximum bending load of the sample with the size of 4mm×3mm×30mm is 282N and the bending displacement is about 0.29mm.The SiCp/Al composites prepared with such excellent overall properties is good electronic packaging Material. |
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| Keywords: | Microwave Sintering Vacuum Pressure Infiltration SiCp/Al |
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