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Determination of hydrogen concentration in a-Si and a-Ge layers by elastic recoil detection analysis |
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| Authors: | NQ KhánhM Serényi A Csik C Frigeri |
| Affiliation: | a Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences (MTA-MFA), H-1121 Budapest, Konkoly-Thege ut 29-33, Hungary b Institute of Nuclear Research of the Hungarian Academy of Sciences (ATOMKI), H-4001 Debrecen, P.O. Box 51, Hungary c CNR-IMEM Institute, Parco Area delle Scienze, 37/A, 43010 Parma, Italy |
| Abstract: | In this work we have studied the individual a-Si and a-Ge hydrogenated layers prepared by RF sputtering on Si (100) substrates using Ar and H2 gas mixture. The absolute value of atomic content of the H was determined by Elastic Recoil Detection Analysis (ERDA) with 1.6 MeV 4He+ beam. The dynamics of the out diffusion was investigated by annealing in high purity (99.999%) argon atmosphere at 350 °C for several hours. It was clearly shown that hydrogen can diffuse out faster from Ge film than from the Si one during annealing of the samples. |
| Keywords: | Elastic recoil detection analysis Hydrogenated Si and Ge layers Thermal stability |
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