| 氢化非晶硅膜高速淀积的研究 |
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| 引用本文： | 彭定坤,王春林.氢化非晶硅膜高速淀积的研究[J].无机材料学报,1992,7(2):221-228. |
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| 作者姓名： | 彭定坤 王春林 |
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| 作者单位： | 中国科学技术大学材料科学与工程系
(彭定坤，王春林)，中国科学技术大学材料科学与工程系(孟广耀) |
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| 摘 要： |
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| 关 键 词： | 淀积 氢化 硅 薄膜 太阳能 电池 |
High-Rate Deposition of Hydrogenated Amorphous Silicon (a-Si:H) |
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| Peng Dingkun Wang Chunlin Meng Cuangyao.High-Rate Deposition of Hydrogenated Amorphous Silicon (a-Si:H)[J].Journal of Inorganic Materials,1992,7(2):221-228. |
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| Authors: | Peng Dingkun Wang Chunlin Meng Cuangyao |
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| Abstract: | A microwave plasma chemical vapor deposition method was used to deposit a-Si:H films at high rate.The influence of deposition parameter upon the depositionand the structure of the deposited films was studied.It showed that this methodcould achieve a deposition rate as high as 100(?)/s with the deposit of fairly goodquality,and the deposition efficiency was found to be nearly 100%. |
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| Keywords: | a-Si H High rate deposition Microwave plasma CVD |
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