首页 | 本学科首页   官方微博 | 高级检索  
     

Si(100)衬底上PLD法制备高取向度AlN薄膜
引用本文:张霞,陈同来,李效民.Si(100)衬底上PLD法制备高取向度AlN薄膜[J].无机材料学报,2005,20(2):419-424.
作者姓名:张霞  陈同来  李效民
作者单位:中国科学院上海硅酸盐研究所高性能陶瓷和超微结构国家重点实验室,上海,200050
基金项目:国家973项目(2002CB613306)
摘    要:采用脉冲激光沉积法(PLD),以KrF准分子为脉冲激光源,Si(100)为衬底,同时引入缓冲层TiN和Ti0.8Al0.2N,制备了结晶质量优异的AlN薄膜,X射线衍射(XRD)及反射式高能电子衍射(RHEED)分析表明AlN薄膜呈(001)取向、二维层状生长.研究发现,薄膜的生长模式依赖于缓冲层种类,直接在Si衬底上或MgO/Si衬底上的AlN薄膜呈三维岛状生长;而同时引入缓冲层TiN和Ti0.8Al0.2N时,AlN薄膜呈二维层状生长.此外,激光能量密度大小对AlN薄膜的结晶性有显著的影响,激光能量密度过大,薄膜表面粗糙,有颗粒状沉积物生成.在氮气气氛中沉积,能使薄膜的取向由(001)改变为(100).

关 键 词:脉冲激光沉积  AlN薄膜  缓冲层
文章编号:1000-324X(2005)02-0419-06
收稿时间:2004-2-9
修稿时间:2004-5-18

Highly-oriented A1N Thin Films on Si(100) Substrates by Pulsed Laser Deposition
ZHANG Xia,CHEN Tong-Lai,LI Xiao-Min.Highly-oriented A1N Thin Films on Si(100) Substrates by Pulsed Laser Deposition[J].Journal of Inorganic Materials,2005,20(2):419-424.
Authors:ZHANG Xia  CHEN Tong-Lai  LI Xiao-Min
Affiliation:StateKeyLaboratoryofHighPerformanceCeramicsandSuperfineMicrostructures;ShanghaiInstituteofCeramics;ChineseAcademyofSciences;Shanghai200050;China
Abstract:Highly crystalline quality A1N thin films were successfully grown on Ti0.8Al0.2N/TiNbuffered p-Si(100) substrates by pulsed laser deposition (laser source: KrF). X-ray diffraction (XRD) and reflective high energy electron diffraction (RHEED) were employed to characterize the as-grown films. The results show that A1N thin films are (001) oriented and grown with 2D layer growth mode. The growth modes of thin films rely on the kinds of buffer layers: A1N thin films on Si wafers or MgO/Si substrates are 3D island grown; whereas those on Ti0.8Al0.2N/TiN/Si substrates are 2D layer grown. In addition, the laser energy density has considerable effects on the crystalline quality of A1N thin films: over high energy leads to rough surface and big particles. The partial nitrogen pressure can make A1N thin films (100) orientation instead of (001) orientation.
Keywords:pulsed laser deposition  aluminium nitride thin film  buffer layer  
本文献已被 CNKI 维普 万方数据 等数据库收录!
点击此处可从《无机材料学报》浏览原始摘要信息
点击此处可从《无机材料学报》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号