| 超声物理气相沉积法制备（00l）取向HgI2膜的研究 |
| |
| 引用本文： | 苏青峰,史伟民,王林军,李东敏,夏义本.超声物理气相沉积法制备（00l）取向HgI2膜的研究[J].无机材料学报,2011(3):261-264. |
| |
| 作者姓名： | 苏青峰 史伟民 王林军 李东敏 夏义本 |
| |
| 作者单位： | 上海大学材料科学与工程学院;上海西域机电系统有限公司; |
| |
| 基金项目： | 国家自然科学基金(10775096); 教育部长江学者与创新团队发展计划(IRT0739); 上海市重点学科(S30107)~~ |
| |
| 摘 要： | 超声波作用下,采用热壁物理气相沉积法在相对较低温度下(<90℃)成功制备了(00l)取向多晶碘化汞膜,分析了超声工艺对(00l)取向多晶碘化汞膜质量的影响.采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、拉曼光谱仪(Raman)对(00l)取向多晶碘化汞膜进行了表征.结果表明,超声波作用下,相对较低的生长温度能够获得高质量(00l)取向多晶碘化汞膜,同时超声波工艺不仅能够明显改善多晶碘化汞厚膜的质量而且能提高生长速率.
|
| 关 键 词： | 碘化汞膜 多晶 物理气相沉积 超声波 |
Effects of Ultrasonic Process on Properties of(00l)-oriented HgI_2 Films by Hot-wall PVD |
| |
| SU Qing-Feng,SHI Wei-Min,WANG Lin-Jun,LI Dong-Min,XIA Yi-Ben.Effects of Ultrasonic Process on Properties of(00l)-oriented HgI_2 Films by Hot-wall PVD[J].Journal of Inorganic Materials,2011(3):261-264. |
| |
| Authors: | SU Qing-Feng SHI Wei-Min WANG Lin-Jun LI Dong-Min XIA Yi-Ben |
| |
| Affiliation: | SU Qing-Feng1,SHI Wei-Min1,WANG Lin-Jun1,LI Dong-Min2,XIA Yi-Ben1(1.School of Materials Science and Engineering,Shanghai University,Shanghai 200072,China,2.Shanghai Westingarea M&E System Co.Ltd,Shanghai 200137,China) |
| |
| Abstract: | Polycrystalline(00l)-oriented HgI2 films were prepared on ITO glass substrate by the modified Water Bath Hot Wall Physical Vapor Deposition method in the ultrasonic wave field.High quality polycrystalline(00l)-oriented HgI2 films,growing along the(00l) crystal plane with columnar and uniform grains,were obtained.Effects of growth process parameters on the quality of(00l)-oriented polycrystalline HgI2 films were discussed.The microstructure and surface morphology of HgI2 films were characterized by X-ray dif... |
| |
| Keywords: | mercuric iodide films polycrystalline physical vapor deposition ultrasonic wave |
| 本文献已被 CNKI 等数据库收录！ |
|
