| ZnO薄膜p型掺杂的研究进展 |
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| 引用本文： | 叶志镇,张银珠,徐伟中,吕建国.ZnO薄膜p型掺杂的研究进展[J].无机材料学报,2003,18(1):11-18. |
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| 作者姓名： | 叶志镇 张银珠 徐伟中 吕建国 |
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| 作者单位： | 浙江大学硅材料国家重点实验室 杭州 310027 |
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| 基金项目： | 国家重点基础研究专项经费“973”G20000683，国家自然科学基金重大研究规划项目(90101009) |
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| 摘 要： | ZnO是一种新型的II-VI族半导体材料,具有许多优异的性能.但由于ZnO存在诸多的本征施主缺陷(如空位氧Vo和间隙锌Zni),对受主产生高度自补偿作用,天然为n型半导体,难以实现p型转变.ZnO薄膜p型掺杂的实现是ZnO基光电器件的关键技术,也一直是ZnO研究中的主要课题,目前已取得重大进展,文章对此进行了详细阐述.
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| 关 键 词： | ZnO薄膜 p型掺杂 特性 |
| 文章编号： | 1000-324X(2003)01-0011-08 |
| 收稿时间： | 2001-12-10 |
| 修稿时间： | 2001年12月10 |
Recent Advances in Research on p-Type ZnO |
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| YE Zhi-Zhen,ZHANG Yin-Zhu,XU Wei-Zhong,LU Jian-Guo.Recent Advances in Research on p-Type ZnO[J].Journal of Inorganic Materials,2003,18(1):11-18. |
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| Authors: | YE Zhi-Zhen ZHANG Yin-Zhu XU Wei-Zhong LU Jian-Guo |
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| Affiliation: | State Key Laboratory of Silicon Material; Zhejiang University; Hangzhou 310027; China |
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| Abstract: | ZnO is a novel material for II-VI semiconductor. Researches indicate that n-type ZnO films can be well prepared, this is due to the high self-compensating process on doping derived from the intrinsic donor defects such as oxygen vacancy (Vo) and zinc interstitial (Znj) atoms, so n-typed ZnO films are formed naturally and p-type ZnO films are difficult to be prepared. How to realize p-type ZnO films through doping is the key step for application in the fields of ZnO-based opoelectrical devices, in which great progresses have been made now. This paper summarized the recent advances in research on p-type ZnO. |
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| Keywords: | zinc oxide thin film p-type ZnO property |
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