| CdS薄膜的SILAR法制备与表征 |
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| 引用本文： | 刘晓新,靳正国,步绍静,赵娟,程志捷.CdS薄膜的SILAR法制备与表征[J].无机材料学报,2004,19(3):691-695. |
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| 作者姓名： | 刘晓新 靳正国 步绍静 赵娟 程志捷 |
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| 作者单位： | 天津大学材料学院先进陶瓷与加工技术教育部重点实验室,天津,300072 |
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| 基金项目： | 天津市重点基础研究项目(F103004) |
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| 摘 要： | 采用液相薄膜制备工艺-SILAR(连续离子层吸附反应)法，在室温下于玻璃衬底上制备了CdS薄膜．对薄膜的表面形貌，薄膜的生长速率以及热处理与薄膜的成相及其电阻率的关系进行了观察和分析．实验结果表明：薄膜表面较致密，生长速率为2nm／cycle，随循环次数的增加，沉积粒子的尺寸趋于增大．室温下沉积的CdS薄膜为非晶态，经热处理后薄膜的结晶度提高，电阻率显著下降．此外，文章结合实验对薄膜的生长机理进行了初步的讨论．
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| 关 键 词： | CdS薄膜 SILAR法 制备与表征 生长机理 |
| 文章编号： | 1000-324X(2004)03-0691-05 |
| 收稿时间： | 2003-5-8 |
| 修稿时间： | 2003-6-13 |
Preparation of CdS Thin Films by SILAR Method |
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| LIU Xiao-Xin,JIN Zheng-Guo,BU Shao-Jing,ZHAO Juan,CHENG Zhi-Jie.Preparation of CdS Thin Films by SILAR Method[J].Journal of Inorganic Materials,2004,19(3):691-695. |
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| Authors: | LIU Xiao-Xin JIN Zheng-Guo BU Shao-Jing ZHAO Juan CHENG Zhi-Jie |
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| Affiliation: | KeyLaboratoryforAdvancedCeramicsandMachiningTechnologyofMinistryofEducation;SchoolofMaterials;TianjinUniversityTianjin300072;China |
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| Abstract: | The SILAR method was applied to prepare cadmium sulfide thin films on a glass
substrate at room temperature. The growth rate and surface morphology of the films with cycle
times were characterized. The effect of annealing on crystal structure and resistivity of the films
was studied. In addition, the growth mechanism of heterogeneous reaction of the thin film was
discussed. The results show that the film as-deposited is amorphous and compact, the growth rate
is about 2nm/cycle and the size of the particles is increased from 60nm to 100nm with the increase
of the cycle times. The crystallinity is increased and the resistivity is decreased with the increase
of annealing temperature from RT to 673K. |
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| Keywords: | CdS film SILAR preparation and characterization growth mechanism |
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