首页 | 本学科首页   官方微博 | 高级检索  
     

ITO薄膜的光电子能谱分析
引用本文:陈猛,裴志亮,白雪冬,黄荣芳,闻立时.ITO薄膜的光电子能谱分析[J].无机材料学报,2000,15(1):188-192.
作者姓名:陈猛  裴志亮  白雪冬  黄荣芳  闻立时
作者单位:中国科学院金属研究所,沈阳,110015
摘    要:运用XPS分析了ITO薄膜真空退火前后各元素化学状态的变化情况.研究表明,低温直流磁控反应溅射ITO薄膜退火前后Sn和In处于各自相同的化学状态中.O以两种化合状态OI和OII存在,其结合能值分别为529.90±0.30eV和531.40±0.20eV,分别对应着氧充足和氧缺乏状态.两者面积之比RoI/oII从薄膜表面到体内逐渐增大.退火后薄膜表面的RoI/oII小于未退火薄膜表面的RoI/oII;经Ar+刻蚀20min后,退火薄膜体内的RoI/oII大于未退火薄膜体内的RoI/oII.这些结果表明,ITO薄膜中氧缺位状态主要分布在薄膜表层.

关 键 词:化学状态  光电子能谱  拟合  ITO薄膜  半导体薄膜
收稿时间:1999-2-11
修稿时间::

X-ray Photoelectron Spectroscopy Studies of ITO Thin Films
CHEN Meng,PEI Zhi-Liang,BAI Xue-Dong,HUANG Rong-Fang,WEN Li-Shi.X-ray Photoelectron Spectroscopy Studies of ITO Thin Films[J].Journal of Inorganic Materials,2000,15(1):188-192.
Authors:CHEN Meng  PEI Zhi-Liang  BAI Xue-Dong  HUANG Rong-Fang  WEN Li-Shi
Affiliation:InstituteofMetalResearch;ChineseAcademyofSciences;Shenyang110015;China
Abstract:The chemical states of In, Sn and O in Sn-doped In2O3 films were investigated byusing X-ray photoelectron spectroscopy. The results indicate that Sn and In respectively exist ina same chemical state for both as-deposited and post-annealed films. Two types of O2- ions, OI and OII, can be distinguished by Gaussian simulation. OI has a binding energy of 529.90±0.30 eVwhich is in oxygen sufficient region, and OII has a binding energy of 531.40±0.2 eV which is inoxygen deficient regions. Oxygen deficient regions mainly exist in the surface layer.
Keywords:chemical state  XPS  Gaussian simulation
本文献已被 CNKI 万方数据 等数据库收录!
点击此处可从《无机材料学报》浏览原始摘要信息
点击此处可从《无机材料学报》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号