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二氧化锡薄膜的电阻气敏和光透射率气敏性能
引用本文:林殷茵,汤庭鳌,黄维宁,姜国宝,姚熹.二氧化锡薄膜的电阻气敏和光透射率气敏性能[J].无机材料学报,2000,15(6):1067-1072.
作者姓名:林殷茵  汤庭鳌  黄维宁  姜国宝  姚熹
作者单位:1. 上海复旦大学电子工程系微电子所,上海200433
2. 西安交通大学电子材料研究所,西安710049
摘    要:以无机盐为原料,采用新颖的溶胶-凝胶工艺制备了具有优良电阻-气敏性能的纳米晶二氧化锡薄膜,其在最佳工作温度200℃对600ppmCO的灵敏度可达500,响应时间和恢复时间分别为13s和20s,进一步研究了薄膜的光透射率-气敏性能,发现当通CO时,透射率下降,最佳工作温度与电阻-气敏性能一致,当提高薄膜的退火温度时,电阻-气敏和光透射率-气敏的灵敏度均下降,分析了产生这些现象的原因。

关 键 词:二氧化锡薄膜  光透射率  溶胶凝胶  电阻  气敏
文章编号:1000-324X(2000)06-1067-06
收稿时间:1999-11-19
修稿时间:1999年11月19

Resistance Gas Sensitivity and nansmittance Gas Sensitivity of SnO2 Thin Film by a Novel Sol-Gel Method
LIN Yin-yin,TANG Ting-ao,HUANG Wei-ning,Jiang Guo-bao,YAO Xi.Resistance Gas Sensitivity and nansmittance Gas Sensitivity of SnO2 Thin Film by a Novel Sol-Gel Method[J].Journal of Inorganic Materials,2000,15(6):1067-1072.
Authors:LIN Yin-yin  TANG Ting-ao  HUANG Wei-ning  Jiang Guo-bao  YAO Xi
Affiliation:1.InstituteofMicroelectronics;DepartmentofElectronicEngineering;FudanUniversity;Shanghai200433;China;2.ElectronicMaterialsResearchLaboratory;XianJiaotongUniversity;Xian710049,China
Abstract:SnO2 thin film with good resistance-gas sensitivity was prepared by a novel sol-gel method using inorganic salts as starting materials. The sensitivity of the thin film to 600ppm CO was up to 500 at the optimal working temperature of 200℃, white the respondence time and recovery time were 13s and 20s respectively. The transmittance gas sensitivity was investigated and it was found that the transmittance of the thin film decreased in CO atmosphere. The best working temperature of the transmittance gas sensitivity is the same as that of the resistance gas sensitivity. Both resistance gas sensitivity and transimittance gas sensitivity decrease when the annealing temperature of the thin film increases. The reason of abouve phenomenon was discussed.
Keywords:thin film  SnO2  gas sensitive  transmittance  sol-gel method
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