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铌表面固体粉末包埋渗硅研究
引用本文:李明,宋力昕,乐军,宋学平,郭占成. 铌表面固体粉末包埋渗硅研究[J]. 无机材料学报, 2005, 20(3): 764-768
作者姓名:李明  宋力昕  乐军  宋学平  郭占成
作者单位:1. 中国科学院上海硅酸盐研究所特种无机材料研究发展中心, 上海市200050; 2. 中国科学院过程工程研究所, 北京 100080
摘    要:采用固体粉末包埋渗硅工艺在铌表面制备了二硅化铌涂层,研究了渗硅过程中Si沉积的反应机理和二硅化铌涂层的结构.结果表明:涂层由单相的二硅化铌组成;Si的输运和沉积主要依靠硅的低氟化物SiF2完成.

关 键 词:渗硅  涂层    二硅化铌  
文章编号:1000-324X(2005)03-0764-05
收稿时间:2004-04-29
修稿时间:2004-06-10

Microstructure and Mechanism of Pack Siliconizing on Niobium
LI Ming,SONG Li-xin,LE Jun,SONG Xue-ping,GUO Zhan-cheng. Microstructure and Mechanism of Pack Siliconizing on Niobium[J]. Journal of Inorganic Materials, 2005, 20(3): 764-768
Authors:LI Ming  SONG Li-xin  LE Jun  SONG Xue-ping  GUO Zhan-cheng
Affiliation:1. Research & Development Center for Special Inorganic Materials; Shanghai Institute of Ceramics; Chinese Academy of Sciences; Shanghai 200050; China; 2.Institute of Process Engineering; Beijing 100080; China
Abstract:NbSi2 coating was formed on niobium by halide-activated pack cementation process. The microstructure of the as-formed coating and the possible reactions of Si deposition were investigated. The results indicate that the as-formed coating consists of single phase of NbSi2- SiF2 is responsible for the transportation and deposition of Si in the pack.
Keywords:siliconizing  coating  niobium  niobium disilicide
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