| 膜去溶进样高分辨ICP-MS测定半导体级硝酸中杂质元素 |
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| 引用本文： | 陈黎明.膜去溶进样高分辨ICP-MS测定半导体级硝酸中杂质元素[J].中国测试,2012(6):38-40. |
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| 作者姓名： | 陈黎明 |
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| 作者单位： | 上海市计量测试技术研究院 |
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| 基金项目： | 国家科技部资助项目(2009IM032300) |
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| 摘 要： | 利用高分辨电感耦合等离子体质谱测定半导体级高纯硝酸中的痕量金属杂质,用膜去溶进样系统直接进样,用标准加入法进行上机检测,无需前处理,快速,避免了在样品前处理时的污染问题。高分辨电感耦合等离子体质谱可以消除多分子离子干扰,降低检出限,提高定量准确性。方法的检出限为0.69～23.73ng/L,加标回收率为88.2%～106.0%,方法简单,结果可靠,适用于高纯硝酸中痕量元素的快速测定。
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| 关 键 词： | 膜去溶 半导体级硝酸 高分辨电感耦合等离子体质谱 杂质元素 |
Determination of impurities in semiconductor grade nitric acid by HR-ICP-MS with membrane desolvation |
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| Authors: | CHEN Li-ming |
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| Affiliation: | CHEN Li-ming(Shanghai Institute of Measurement and Testing Technology,Shanghai 201203,China) |
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| Abstract: | Trace metals in semiconductor grade nitric acid were determined by HR-ICP-MS with membrane desolvation.The sample was analyzed directly,and all elements were determined with standard addition.The experimental results indicate that the method is easier and fast and it avoids the pollution of sample.HR-ICP-MS can eliminate multi-molecular ion disruption,reduce detect limit,and improve quantitative accuracy.The detection limits were 0.69-23.73 ng/L,and their recoveries were from 88.2% to 106.0%.All the above show that the method is suitable for rapidly determining trace elements in semiconductor grade hydrofluoric acid,which is simple with credible results. |
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| Keywords: | membrane desolvation semiconductor grade nitric acid HR-ICP-MS impurity element |
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