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An investigation of the electrical transport properties of graphene-oxide thin films |
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| Authors: | Gunasekaran Venugopal Karthikeyan KrishnamoorthyRajneesh Mohan Sang-Jae Kim |
| Affiliation: | a Nano Materials and System Lab, Department of Mechanical Engineering, Jeju National University, Jeju 690-756, Republic of Korea b Faculty of Nanosciences and Technology Department, School of Nanosciences and Technology, Karunya University, Coimbatore 641 114, Tamil Nadu, India c Department of Mechatronics Engineering, Jeju National University, Jeju 690-756, Republic of Korea d Faculty of Mechatronics Engineering & Research Institute of Advanced Technology, Jeju National University, Jeju 690-756, Republic of Korea |
| Abstract: | The electrical transport properties of graphene-oxide (GO) thin films were investigated. The GO was synthesized by a modified Hummers method and was characterized by X-ray diffraction and UV-visible spectroscopy. The thin film of GO was made on a Si/SiO2 substrate by drop-casting. The surface morphology of the GO film was analyzed by using scanning electron microscopy and atomic force microscopy techniques. Temperature dependent resistance and current-voltage measurements were studied using four-terminal method at various temperatures (120, 150, 175, 200, 250 and 300 K) and their charge transport followed the 3D variable range hopping mechanism which was well supported by Raman spectra analysis. The presence of various functional groups in GO were identified by using high resolution X-ray photo electron (XPS) and Fourier transform infra red (FT-IR) spectroscopic techniques. Graphene-oxide thin film field effect transistor devices show p-type semiconducting behavior with a hole mobility of 0.25 cm2 V−1 s−1 and 0.59 cm2 V−1 s−1 when measured in air and vacuum respectively. |
| Keywords: | Graphene oxide Modified Hummers method Functional groups Transistor |
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