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Temperature dependence of In1−xGaxSb reflectivity in the far infrared
Authors:PM Nikolić  KM Paraskevopoulos  E Pavlidou  TT Zorba  T Ivetić  SS Vujatović  OS Aleksić  N Nikolić  O Cvetković  V Blagojević  MV Nikolić
Affiliation:1. Institute of Technical Sciences of SASA, Knez Mihailova 35/IV, 11000 Belgrade, Serbia;2. Physics Department, Solid State Section, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece;3. Institute for Multidisciplinary Research, Kneza Vi?eslava 1, 11000 Belgrade, Serbia;4. IChTM, Center of Chemistry, Studentski Trg 12, 11000 Belgrade, Serbia;5. Faculty of Electrical Engineering, University of Belgrade, Bulevar Kralja Aleksandra 73, 11000 Belgrade, Serbia
Abstract:Far infrared reflectivity spectra of polycrystalline In1?xGaxSb were measured and numerically analyzed using the classical dispersion formula and also a fitting procedure based on the modified plasmon-phonon interaction model in the temperature range from 10 K to 300 K. Optical parameters were calculated and discussed. A local mode belonging to the GaSb rich end and two-mode behavior were observed at low temperatures.
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