实验优化设计中频反应溅射Al2O3:Ce薄膜发光性质研究

为了得到最优发光的薄膜材料成分参数,采用均匀设计和二次通用旋转组合设计相结合的方法建立发光强度与薄膜中氧含量和Ce³⁺ 离子掺杂浓度的回归方程,并用遗传算法求其取最大值时的解。用中频反应磁控溅射技术制备了相应成分的Al₂O₃:Ce非晶薄膜。在320nm光激发下,获得了较理想的发射光谱,对薄膜发光机理分析表明:薄膜的光致发光来自于Ce³⁺ 离子的5d1激发态向基态4f1的两个劈裂能级的跃迁。发光强度强烈的依赖于薄膜的掺杂浓度和氧元素含量。XPS检测表明,Al₂O₃:Ce薄膜中存在Ce³⁺ 。Ce³⁺ 含量和薄膜的化学成分是通过X射线散射能谱(EDS)测量的。薄膜试样的晶体结构应用X射线衍射分析。

The Luminescent Property of Al2O3:Ce MFRMS Thin Films Sputtered by Optimal Design of Experiments

The method of optimally designing experiments was introduced to study the properties of Al₂O₃:Ce luminescence thin films.Uniform design and quadratic general rotary unitized design were combined to build the equation between the luminescent intensity and the O2-/Ce³⁺ doping concentration.Genetic algorithm was introduced into the calculation to obtain the best luminescent intensity.The optimal amorphous Al₂O₃:Ce thin films were deposited by the MF reactive magnetron sputtering technique.Under 320nm ultraviolet excitation,the blue emission spectrum was detected.The luminescence mechanism was studied.The photoluminescence emission from these films was associated with 5d1 to 4f1 transitions of Ce³⁺ ions.The intensity of these peaks was strongly dependent on the amount of cerium and oxygen incorporated in the films.There were some Ce³⁺ in the Al₂O₃:Ce thin films by XPS measurement.The presence of cerium as well as the stoichiometry of these films were determined by energy dispersive X-ray spectroscope measurements.The crystalline structure of the sample was analyzed by X-ray diffractometry.