| 用SiCl_4/O_2-PECVD技术低温沉积Si基厚SiO_2薄膜 |
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| 引用本文： | 余云鹏,徐严平,吴永俊,林璇英.用SiCl_4/O_2-PECVD技术低温沉积Si基厚SiO_2薄膜[J].真空,2001(4). |
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| 作者姓名： | 余云鹏 徐严平 吴永俊 林璇英 |
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| 作者单位： | 汕头大学!广东汕头515063(余云鹏，徐严平，林璇英)，汕头超声电子集团!广东汕头515041(吴永俊) |
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| 摘 要： | 选取不含 H2 的 Si Cl4 / O2 混合气体作为反应源气体 ,并利用普通的 PECVD技术来实现低温沉积 Si基微米厚度的 Si O2 薄膜 ,测试并分析薄膜的红外吸收谱以及工艺参数对沉积过程的影响。
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| 关 键 词： | 二氧化硅薄膜 SiCl4 PECVD 低温沉积 |
Using SiCl_4/O_2-PECVD to deposite thick silica films on silicon at low temperature |
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| YU Yun peng ,XU Yan ping ,WU Yong jun ,LIN Xuan ying.Using SiCl_4/O_2-PECVD to deposite thick silica films on silicon at low temperature[J].Vacuum,2001(4). |
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| Authors: | YU Yun peng XU Yan ping WU Yong jun LIN Xuan ying |
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| Affiliation: | YU Yun peng 1,XU Yan ping 1,WU Yong jun 2,LIN Xuan ying 1 |
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| Abstract: | A normal PECVD method was introduced to deposite silica films of several micrometers on silicon wafer at low temperature condition. Used raw material was the SiCl 4/O 2 mixed gas with no hydrogen. The IR absorption spectrums of films and the impact of process parameters on deposition were also analysed. |
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| Keywords: | silica film SiCl 4 PECVD deposition |
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