| 薄膜厚度对TGZO透明导电薄膜光电性能的影响 |
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| 引用本文： | 刘汉法,张化福,王振环.薄膜厚度对TGZO透明导电薄膜光电性能的影响[J].真空科学与技术学报,2011,31(2):183-186. |
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| 作者姓名： | 刘汉法 张化福 王振环 |
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| 作者单位： | 山东理工大学理学院,淄博,255049 |
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| 基金项目： | 山东省自然科学基金(No.ZR2009GL015) |
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| 摘 要： | 利用直流磁控溅射法,在室温水冷玻璃衬底上成功制备出了可见光透过率高、电阻率低的钛镓共掺杂氧化锌(TG-ZO)透明导电薄膜。X射线衍射和扫描电子显微镜研究结果表明,TGZO薄膜为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向。研究了厚度对TGZO透明导电薄膜电学和光学性能的影响,结果表明厚度对薄膜的光电性能有重要影响。当薄膜厚度为628 nm时,薄膜具有最小电阻率2.01×10-4Ω.cm。所制备薄膜在波长为400~760 nm的可见光中平均透过率都超过了91%,TGZO薄膜可以用作薄膜太阳能电池和液晶显示器的透明电极。
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| 关 键 词： | TGZO薄膜 透明导电薄膜 磁控溅射 厚度 |
Impact of Film Thickness on Properties of Ti-Ga Co-Doped ZnO Films |
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| Liu Hanfa,Zhang Huafu,Wang Zhenhuan.Impact of Film Thickness on Properties of Ti-Ga Co-Doped ZnO Films[J].JOurnal of Vacuum Science and Technology,2011,31(2):183-186. |
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| Authors: | Liu Hanfa Zhang Huafu Wang Zhenhuan |
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| Affiliation: | Liu Hanfa,Zhang Huafu,Wang Zhenhuan(School of Science,Shandong University of Technology,Zibo 255049,China) |
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| Abstract: | The Ti-Ga Co-doped ZnO(TGZO) films were deposited by DC magnetron sputtering at room temperature,on water-cooled glass substrates.The impacts of the growth conditions,including the film thickness,deposition rate,Ti and Ga contents,and deposition rates,on the electrical and optical properties of the ZnO films were studied.The microstructures were characterized with X-ray diffraction and scanning electron microscopy.The results show that the film thickness strongly affects the electrical and optical propertie... |
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| Keywords: | Ti-Ga Co-doped zinc oxide films Transparent conducting films Magnetron sputtering Thickness |
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