| O_2/Ar比例对直流脉冲磁控溅射制备TiO_2薄膜光催化性能的影响 |
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| 引用本文： | 张粲,丁万昱,王华林,柴卫平.O_2/Ar比例对直流脉冲磁控溅射制备TiO_2薄膜光催化性能的影响[J].真空科学与技术学报,2010,30(2). |
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| 作者姓名： | 张粲 丁万昱 王华林 柴卫平 |
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| 作者单位： | 大连交通大学光电材料与器件研究所,大连,116028;大连交通大学材料科学与工程学院,大连,116028 |
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| 基金项目： | 大连市科技计划项目(批号:060907)资助的课题 |
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| 摘 要： | 利用直流脉冲磁控溅射方法在不同O2/Ar比例条件下制备具有不同结构、性能的TiO2薄膜,利用台阶仪、X射线衍射仪及紫外-可见分光光度计等仪器,对薄膜的结构、透光性能、光催化性能等进行表征。研究结果表明:TiO2薄膜的结构、光催化性能等强烈依赖于沉积过程中的O2/Ar比例。在低O2/Ar比例条件下制备的TiO2薄膜,薄膜处于O控制生长阶段,相应薄膜处于高速生长状态,薄膜经退火处理后形成锐钛矿(101)相择优取向结构,同时薄膜对甲基橙溶液降解率较低。随着O2/Ar比例的增加,薄膜生长速率逐渐降低,薄膜逐渐呈现多相混合生长,经退火处理后薄膜呈现锐钛矿(101)相与(004)相的混合相结构,相应薄膜对甲基橙溶液降解率增加,在O2/Ar比为6/14时,其对甲基橙溶液降解率达到最大值,为86.45%。继续增加O2/Ar比例,在高O2/Ar比例条件下,薄膜沉积速率较低,沉积离子有充足的驰豫时间释放自身能量以寻找低能位置,因此在薄膜沉积过程中主要形成能量最低的锐钛矿(101)相结构,经退火处理后薄膜呈现锐钛矿(101)相择优取向结构,在O2/Ar比为20/0时,薄膜对甲基橙溶液降解率下降至52.15%。
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| 关 键 词： | 磁控溅射 TiO_2薄膜 O_2/Ar比例 光催化性能 |
Impacts of O_2/Ar Flow Rate Ratio on Photocatalytic Activity of Magnetron Sputtered TiO_2 |
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| Zhang Can,Ding Wanyu,Wang Hualin,Chai Weiping.Impacts of O_2/Ar Flow Rate Ratio on Photocatalytic Activity of Magnetron Sputtered TiO_2[J].JOurnal of Vacuum Science and Technology,2010,30(2). |
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| Authors: | Zhang Can Ding Wanyu Wang Hualin Chai Weiping |
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| Affiliation: | Zhang Can1,2,Ding Wanyu1,Wang Hualin1,Chai Weiping1,2(1.Institute of Optoelectronic Materials , Device,Dalian Jiaotong University,Dalian 116028,China,2.School of Materials Science , Engineering,China) |
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| Abstract: | The TiO2 films were deposited by DC-pulsed magnetron sputtering at room temperature on glass substrates.The microstructures and properties of the films were characterized X-ray diffraction,atomic force microscopy,ultraviolet visible(UV-Vis) spectroscopy and conventional probes.The influence of film growth conditions on the film property was studied.The results show that the O2/Ar flow rate ratio significantly affects the microstructures and photocatalytic activity of the TiO2 films.For instance,at a low rat... |
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| Keywords: | Magnetron sputtering TiO_2 films O_2/Ar flow ratio Photocatalysis |
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