基于溶胶凝胶法的二氧化锡复合薄膜的制备及表征

以金属无机盐SnCl2.2H2O、CuCl2.2H2O和无水乙醇为原料,用溶胶凝胶法制备了SnO2和CuO掺杂的CuO-SnO2薄膜,并用X射线衍射、扫描电镜、透射电镜和电化学工作站对样品进行了表征。结果表明:随着退火温度的增加,薄膜结晶性变好,晶粒长大,电学特性增强,最佳退火温度确定为450℃。掺杂CuO的SnO2薄膜导电性好于同等条件下未掺杂的SnO2薄膜。SnO2呈四方相金红石结构,衍射峰显示薄膜中存在部分SnO。聚乙二醇的添加增强了SnO2的衍射峰,当超过一定添加量后将抑制晶粒的生长,并使得CuO-SnO2薄膜的导电性呈先减小后增大的趋势。丙三醇的添加可极大改善薄膜的表面形貌,增强了SnO2的衍射峰,且导电性明显变好。

Growth and Characterization of Sol-Gel CuO-Doped SnO2 Films

The CuO-doped SnO2 composite films were grown in sol-gel method on Si(100) substrates.The impacts of the growth conditions,including the concentrations of Sn and CuO in the solution,annealing temperature,and polyethylene glycol(PEG) addition,on the microstructures and properties of the films were evaluated.The CuO doped composite films and the control sample were characterized with X-ray diffraction,scanning electron microscopy,transmission electron microscopy and electrochemical probe.The results show that the CuO-doping and annealing temperature strongly affect the microstructures and properties of the films.For instance,an increase of the annealing temperature resulted in bigger SnO2 grains,improvement of compactness,and reduction of the sheet resistance.The optimized annealing temperature was found to be 450℃.Addition of a certain amount of PEG and glycerine significantly bettered the crystallization and surface morphology of the films.