| 无压烧结合成纯Ti3SiC2及其晶体生长机理 |
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| 引用本文： | 杨锋,李长生,唐华,朱秉莹,高庆侠,刘金银子,胡志立.无压烧结合成纯Ti3SiC2及其晶体生长机理[J].真空科学与技术学报,2012,32(9):825-829. |
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| 作者姓名： | 杨锋 李长生 唐华 朱秉莹 高庆侠 刘金银子 胡志立 |
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| 作者单位： | 1. 江苏大学机械工程学院江苏省摩擦学重点实验室 镇江212013
2. 江苏大学材料科学与工程学院 镇江212013 |
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| 基金项目： | 国家自然科学基金项目(50471051);863计划项目(2007AA03Z358) |
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| 摘 要： | 在1400℃,用Ti,Si,C,Al,NaCl原料,氩气保护下无压烧结合成出纯净的、层状的Ti3SiC2陶瓷。用X射线衍射、扫描电子显微镜,透射电子显微镜对Ti3SiC2陶瓷的物相、表面形貌、微观结构进行表征。对合成出的Ti3SiC2陶瓷的微观形貌进行观察,发现Ti3SiC2晶体中有规整的六方形状的层状晶体,提出了Ti3SiC2晶体的自由生长的机理。Ti3SiC2晶体的生长机理由二维成核理论控制,台阶状晶体生长的形貌表明(002)晶面的生长要经过两个独立的过程。添加NaCl,有助于生成高纯度的层状Ti3SiC2陶瓷。
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| 关 键 词： | Ti3SiC2 无压烧结 晶体 层状 生长机理 |
Synthesis of Ti3SiC2 Ceramics by Reactive Sintering andIts Growth Mechanism |
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| Yang Feng
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Li Changsheng
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Tang Hua
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Zhu Bingying
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Gao Qingxia
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Liu Jinyinzi
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Hu ZhiLi.Synthesis of Ti3SiC2 Ceramics by Reactive Sintering andIts Growth Mechanism[J].JOurnal of Vacuum Science and Technology,2012,32(9):825-829. |
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| Authors: | Yang Feng Li Changsheng Tang Hua Zhu Bingying Gao Qingxia Liu Jinyinzi Hu ZhiLi |
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| Affiliation: | 1(1.School of Mechanical Science and Engineering Jiangsu University,Key Laboratory of Tribology of Jiangsu Province,Zhenjiang 212013,China;2.School of Material Science and Engineering Jiangsu University,Zhenjiang 212013,China) |
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| Abstract: | The laminated Ti3SiC2 ceramics were fabricated by reactive sintering a mixture of Ti,Si,C,and Al powders and NaCl additive,at 1400℃ in argon atmosphere.The impacts of the sintering conditions on the quality of Ti3SiC2 ceramics were evaluated.The microstructures,phase structures,and surface morphologies of the Ti3SiC2 ceramics were characterized with X-ray diffraction,scanning electron microscopy,and transmission electron microscopy.The results show that the laminated,highly hexagonal Ti3SiC2 crystal grains exist in the ceramics,and that the addition of NaCl strongly improves the purity of Ti3SiC2.ceramics.The possible growth mechanisms responsible for the laminated grains were tentatively discussed. |
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| Keywords: | Ti3SiC2 Pressureless reactive Crystals Layered Growth mechanism |
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