Na2S2O3浓度对共电沉积制备Cu2ZnSnS4薄膜性能的影响

采用电化学沉积的方法在SnO2透明导电玻璃基底上沉积Cu2ZnSnS4(CZTS)薄膜,在氮气保护下对其进行进一步硫化,研究了溶液中不同Na2S2O3浓度对沉积薄膜性质的影响。运用X射线衍射、扫描电镜、紫外-可见光分光光度计和拉曼光谱等手段分别对薄膜进行表征。实验结果表明:随着浓度的增加,薄膜的结构和光学特性逐渐变好。当Na2S2O3的浓度为0.11 mol/L时,制得理想的具有类黝锡矿结构的CZTS薄膜,光学带隙1.51 eV。

Influence of Na2S2O3 Concentration on Properties of Cu2ZnSnS4 Films Grown by Electrodeposition

The Cu2ZnSnS4(CZTS) films were grown by co-electro-deposition on the transparent conductive SnO2 glass substrates.The as-deposited CZTS films were then sulfurized in the atmosphere of N2+S2.The influence of the Na2S2O3 concentrations on the film growth and its microstructures were studied.The CZTS films were characterized with X-ray diffraction,scanning electron microscopy,ultraviolet visible spectroscopy,and Raman spectroscopy.The results show that the NaS2O3 concentration in the electrolyte strongly affects the microstructures and optical properties of the films.For instance,as the concentration increases,the films become more compact and more uniform with finer grains and improved optical properties.At a concentration of 0.11 mol/L,the single-phased CZTS film has an averaged grain size of 1 μm,a band-gap of 1.51 eV,and an absorption coefficient,α,over 104 cm-1,and it is a potential material for solar cell fabrication.