SiO2/聚酰亚胺/SiO2复合薄膜绝缘性能及基于聚酰亚胺复合薄膜的后栅型场致发射性能的研究

使用射频磁控溅射和化学溶液法制备了SiO2/聚酰亚胺(PI)/SiO2绝缘膜。分别使用X射线衍射、扫描电镜对薄膜结构和薄膜表面形貌进行了表征;利用超高阻微电流测试仪测试了SiO2/PI/SiO2复合绝缘膜漏电流和电压击穿特性;采用SiO2/PI/SiO2作为绝缘膜,制作了后栅型场致发射器件,使用场发射测试系统测试了器件的开启电压、发射电流以及发光亮度。结果表明:SiO2/PI/SiO2复合绝缘膜具有高的击穿电压和低的漏电流密度,后栅器件中栅极对阴极表面的电场强度调控作用明显,阳极电压为750V时,栅极开启电压为91 V,阳极电流可达384μA,栅极漏电流仅为59μA,器件最高亮度可达600 cd/m2。

Characterization of SiO2/Polymide/SiO2 Composite Films and Its Applications in Field Emission Display

The SiO2/polymide(PI)/SiO2 composite films were deposited by a combination of RF magnetron sputtering and chemical solution deposition.The microstructures and properties of the composite films were characterized with X-ray diffraction and scanning electron microscopy.The impacts of the deposition conditions on quality of the films were studied.The prototyped under-gate field emission display(FED) device was fabricated with the SiO2/PI/SiO2 composite films.Various properties of the device,including the breakdown and on-set voltages,peak emission current,density,luminous intensity,and leakage current,were measured.The results show that the SiO2/PI/SiO2 composite film is a potential device-grade FED material with high breakdown voltage and low leakage current.For example,at an anode voltage of 750 V and an on-set grid voltage of 91 V,the anode and grid currents were found to be 384 μA and 59 μA,respectively,with a luminous intensity of 600 cd/m2.