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具有非易失存储功能的可逆有机电双稳器件
引用本文:郭鹏,董元伟,霍钟祺,吕银祥,徐伟.具有非易失存储功能的可逆有机电双稳器件[J].真空科学与技术学报,2007,27(2):89-91.
作者姓名:郭鹏  董元伟  霍钟祺  吕银祥  徐伟
作者单位:复旦大学材料科学系,上海,200433
基金项目:教育部跨世纪优秀人才培养计划;国家自然科学基金;上海市纳米科技专项基金
摘    要:报道一种能够在室温下具有可逆电双稳特性,并实现非易失信息存储功能的有机薄膜器件。器件为简单的三层结构,Al/HPYM/Ag,HPYM为一种有机分子材料,通过真空热蒸发法制成薄膜作为信息存储介质。该器件可通过正向及反向电压脉冲的激发而实现高阻态(“0”态)、低阻态(“1”态)的转变,相当于信号的写入和擦除。当外电场撤除时,其状态信息可以长时间保持,并且被小电压脉冲读取,两种导电态的阻值比约为10^5。

关 键 词:有机分子材料  可逆电双稳态  分子基器件  非易失性信息存储
文章编号:1672-7126(2007)02-089-03
修稿时间:2006-06-23

A Reversible Organic Electrical Bistable Device for Nonvolatile Memory Applications
Guo Peng,Dong Yuanwei,Huo Zhongqi,Lu Yinxiang,Xu Wei.A Reversible Organic Electrical Bistable Device for Nonvolatile Memory Applications[J].JOurnal of Vacuum Science and Technology,2007,27(2):89-91.
Authors:Guo Peng  Dong Yuanwei  Huo Zhongqi  Lu Yinxiang  Xu Wei
Affiliation:Department of Materials Science, Fudan University, Shanghai 2130433, China
Abstract:A reversible organic electrical bistable device for nonvolatile memory applications is reported. The Al/HPYM/Ag device, which was fabricated by vacuum evaporation, has a simple sandwich structure, where the HPYM is a new molecular material. The switching device can be written from a high-resistance state to a low-resistance state by a voltage pulse and then be erased by a reverse voltage.The two states of the device differ in their conductivity by 10^5 times and can be read by a voltage lower than writing and erasing voltage.
Keywords:Organic molecular material  Reversible electrical bistable states  Molecular-based device  Nonvolatile memory
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