| Si基n型GaN的欧姆接触研究 |
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| 引用本文： | 李嘉炜,何乐年,陈忠景,叶志镇.Si基n型GaN的欧姆接触研究[J].真空科学与技术学报,2003,23(1):40-42. |
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| 作者姓名： | 李嘉炜 何乐年 陈忠景 叶志镇 |
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| 作者单位： | 浙江大学硅材料国家重点实验室,杭州,310027 |
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| 基金项目： | 国家重点基础研究发展规划项目 (No G2 0 0 0 0 683 0 6) |
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| 摘 要： | GaN材料在光电子器件领域的广泛应用前景使得金属与其欧姆接触的研究成为必然。本文对Si基n型GaN上的Al单层及Ti/Al双层电极进行了研究。通过对不同退火条件下的I U特性曲线 ,X射线衍射以及二次离子质谱分析 ,揭示了界面固相反应对欧姆接触的影响 ,提出了改善这两种电极欧姆接触的二次退火方法
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| 关 键 词： | Si基GaN 欧姆接触 界面固相反应 二次退火 |
| 文章编号： | 0253-9748(2003)01-0040-03 |
| 修稿时间： | 2001年6月20日 |
Studies of Ohmic Contact of Si Based n-GaN |
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| Li Jiawei,He Lenian,Chen Zhongjing,Ye Zhizhen.Studies of Ohmic Contact of Si Based n-GaN[J].JOurnal of Vacuum Science and Technology,2003,23(1):40-42. |
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| Authors: | Li Jiawei He Lenian Chen Zhongjing Ye Zhizhen |
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| Abstract: | Al and Ti/Al metal electrodes were fabricated on surface of n type GaN films grown on Si(111)substrate and the Ohmic contact,annealed at different temperatures was studied with X ray diffraction spectroscopy (XRD),secondary ion mass spectroscopy (SIMS) and I U characteristics analysis.Interfacial reactions were found to strongly affect the structures of the Ohmic contact.We suggest that a high temperature annealing after the initial low temperature annealing (two stage annealing) may significantly improve the properties of the metal/semiconductor contact. |
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| Keywords: | GaN/Si Ohmic contact Interface solid state reaction Secondary annealing |
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