| 由过量Pb引起的PLT铁电薄膜钉扎现象 |
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| 引用本文： | 宋志棠,任巍,张良莹,姚熹.由过量Pb引起的PLT铁电薄膜钉扎现象[J].材料研究学报,1998,12(6):655-658. |
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| 作者姓名： | 宋志棠 任巍 张良莹 姚熹 |
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| 作者单位： | [1]中国科学院上海冶金所信息功能材料国家重点实验室 [2]西安交能大学电子材料与器件研究所 |
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| 基金项目： | 国家自然科学基金!59582011 |
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| 摘 要： | 采用金属有机热分解法制备了Ｐｂ过量的ＰＬＴ铁电薄膜，电子探针和Ａｕｇｅｒ电子能谱分析证实了薄膜中及薄膜与底电极界面上存在过量Ｐｂ引起成份偏析，导致缺陷能级上的陷阱电荷，在退极化场的作用下，陷阱电荷可聚集在畴壁钉扎电畴，造成电滞回线和Ｃ－Ｖ曲线异常。
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| 关 键 词： | 铁电薄膜 钉扎现象 电滞回线 C－V曲线 PLT 铅 |
| 收稿时间： | 1998-12-25 |
| 修稿时间： | 1998-12-25 |
ON PINNING PHENOMENON OF PLT FERROELECTRIC THIN FILMS CAUSED BY EXCESS Pb |
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| SONG Zhitang,REN Wei,ZHANG Liangying,YAO Xi.ON PINNING PHENOMENON OF PLT FERROELECTRIC THIN FILMS CAUSED BY EXCESS Pb[J].Chinese Journal of Materials Research,1998,12(6):655-658. |
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| Authors: | SONG Zhitang REN Wei ZHANG Liangying YAO Xi |
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| Affiliation: | SONG Zhitang,REN Wei,ZHANG Liangying,YAO Xi(State Key Laboratory of innctional materials for Information,Shanghai institute ofMetallurpy,The Chinese Academy of Sciences,Shanghai )(Electronic Materials Research Laborutory,Xi'an Jiaotong Universit |
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| Abstract: | PLT thin films with excess Ph was prepared by metallo-organic decomposition process.Electron probe microanalyzer (EPMA) and Auger electron spectroscopy (AES) depth profile composition analysis has revealed that there is excess Pb in PLT thin films and interfaces between thin film and bottom electrode. The excess Pb accumulated at domains walls under a depolarizing field and act as the pinning center and have a strong efFect on ferroelectric domains. The abnormal hySteresis loops and C-V curves were caused by pinning domains in the films. |
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| Keywords: | ferroelectric thin film pinning phenomenon hysteresis loop C-V curve |
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