衬底偏压对四面体非晶碳膜结构和性能的影响

采用过滤阴极真空电弧技术并施加一定的衬底负偏压,在P(100)单晶硅片上制备出四面体非晶碳薄膜利用可见光Raman光谱研究薄膜的结构,通过BWF函数描述的单斜劳伦兹曲线拟合数据并获得表征曲线非对称性的耦合系数,从而反映了薄膜中sp3杂化的含量分别用原子力显微镜和纳米压入仪研究薄膜的表面形态和力学性能.结果表明:当衬底偏压为-80V时,薄膜中sp3杂化的含量最多,均方根表面粗糙度值最低(Rq=0.23nm),硬度、杨氏模量和临界刮擦载荷也最大,分别为51.49GPa、512.39GPa和11.72mN.随着衬底偏压的升高或降低,sp3键的含量减少,其它性能指标也分别降低.

Structure and properties of ta-C films deposited by filtered cathodic vacuum arc technology as a function of substrate bias

Tetrahedral amorphous carbon (ta-C) films have been deposited on P-type (100) polished c-silicon wafer with different substrate negative bias by filtered cathodic vacuum arc technology. The microstructure of ta-C films was measured by visible Raman spectroscopy and the spectra were fitted with a single skewed Lorentzian peak described by BWF function. The coupling coefficient characterizes the asymmetric degree of the spectra and is correlated with the sp3 content. The surface morphology and mechanical properties were researched respectively by AFM and Nano-lndentor. When the substrate bias is -80 V, the sp3 content is the most, the root mean square surface roughness is least (Rq=0.23 nm) and hardness (51.49 GPa), Young's modulus (512.39 GPa), and critical scratching load (11.72 mN) are the highest. As the substrate bias increases or decreases, the sp3 content and other properties lower correspondingly.