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侧壁压阻式力传感器的研制与标定
引用本文:陈涛,孙立宁,陈立国,荣伟彬,李昕欣,王家畴.侧壁压阻式力传感器的研制与标定[J].纳米技术与精密工程,2010,8(3):201-205.
作者姓名:陈涛  孙立宁  陈立国  荣伟彬  李昕欣  王家畴
作者单位:1. 苏州大学机器人与微系统研究中心,苏州,215021
2. 哈尔滨工业大学机器人技术与系统国家重点实验室,哈尔滨,150001
3. 中科院上海微系统与信息技术研究所传感技术国家重点联合实验室,上海,200050
基金项目:国家杰出青年基金资助项目,国家高技术研究发展计划(863)资助项目,国家自然科学基金资助项目 
摘    要:在对现有微操作中夹持力问题进行分析的基础上,提出了一种基于面内侧壁压阻的力传感器加工方法,成功地在MEMS微夹持器上集成了压阻式的力检测传感器,对夹持力的检测反馈实现了微操作的闭环控制.该方法利用离子注入工艺和深度反应离子刻蚀(DRIE)工艺相结合制作检测梁侧壁压阻,改善了侧壁压阻工艺与其他工艺间的兼容性问题.最后通过压电叠堆驱动平台结合精密电子秤对压阻传感器进行了标定.测试表明,这种微力传感器加工技术可以很好地与其他工艺相兼容,力传感器的灵敏度优于72V/N,分辨率优于3μN.

关 键 词:微机电系统  侧壁压阻  力传感器

Design and Calibration of Sidewall Piezoresistive Force Sensor
CHEN Tao,SUN Li-ning,CHEN Li-guo,RONG Wei-bin,LI Xin-xin,WANG Jia-chou.Design and Calibration of Sidewall Piezoresistive Force Sensor[J].Nanotechnology and Precision Engineering,2010,8(3):201-205.
Authors:CHEN Tao  SUN Li-ning  CHEN Li-guo  RONG Wei-bin  LI Xin-xin  WANG Jia-chou
Affiliation:1. Robotics and Microsystems Center,Soochow University,Suzhou 215021,China; 2. State Key Laboratory of Robotics and System,Harbin Institute of Technology,Harbin 150001,China; 3. State Key Laboratory of Transducer Technology,Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences,Shanghai 200050,China)
Abstract:Some existing problems about gripping force in the micromanipulation were summarized. An effective fabricating sidewall piezoresistor in plane technique was proposed and successfully used to fabricate piezoresistor force sensor in a MEMS microgripper. A closed-loop control of micro-operation was achieved for the detection of the feedback gripping force. The ion implantation technique combined with the deep reactive ion etching ( DRIE) technology was used to fabricate the sidewall sensor. The compatibility of the vertical sidewall surface piezoresistor technique with other micromachining techniques was improved. At last,an electronic scale and a precision voltage meter were used to calibrate the piezorisistive sensor. The experimental results verify that the sensitivity of the fabricated displacement sensors is better than 72 V/N,and the displacement resolution is better than 3 μN.
Keywords:MEMS  sidewall piezoresistor  force sensor
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