Nanoarchitectonics of SnSe with the impacts of ultrasonic powers and ultraviolet radiations on physical and optoelectronic properties

In this study, SnSe nanostructures prepared by the precipitation method were exposed to the irradiation of ultrasound waves at different powers and ultraviolet (UV) rays. The results of structural analyses revealed the formation of SnSe nanostructure phases and the presence of Sn and Se, respectively. The structural properties, including stress and strain, were calculated for all main peaks obtained from the XRD analysis conformed to the orthorhombic phase. The FESEM images demonstrated that they were narrow-size nanorods alongside agglomeration particles dispersed in all samples. PL results illustrated changes in the ultrasonic power, UV, and simultaneous irradiation of these waves led to the shift of emission bands and intensities. The absorption spectra were measured in the range of 200–1100 nm, indicating that they were shifted into higher wavelengths. Additionally, energy band gap (E_g) changes showed that their E_g was in the range of ～ 1.30 eV. I-V characteristics results demonstrated that increase of ultrasonic power, UV, and ultrasound irradiation resulted in the enhancement of responsivity and sensitivity. Furthermore, they had detectivity in the range of 12–122 × 10⁷ (Jones). Moreover, the irradiation of ultrasound and UV rays had a considerable impact on mobility and carrier concentration.