Advantages of using amorphous indium zinc oxide films for window layer in Cu(In,Ga)Se2 solar cells |
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Authors: | Moe WarasawaAkira Kaijo Mutsumi Sugiyama |
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Affiliation: | a Department of Electrical Engineering, Faculty of Science & Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510, Japanb Idemitsu Kosan Co., Ltd., 1280 Kami-izumi, Sodegaura, 229-0293, Japan |
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Abstract: | The advantages of using indium zinc oxide (IZO) films instead of conventional Ga-doped zinc oxide (ZnO:Ga) films for Cu(In,Ga)Se2 (CIGS) solar cells are described. The electrical properties of IZO are independent of film thickness. IZO films have higher mobility (30-40 cm2/Vs) and lower resistivity (4-5 × 10− 4 Ω cm) compared to ZnO:Ga films deposited without intentional heating, because the number of grain boundaries in amorphous IZO films is small. The properties of a CIGS solar cell using IZO at the window layer were better than those obtained using a conventional ZnO:Ga at the window layer; moreover, the properties tended to be independent of thickness. These results indicate that use of IZO as a transparent conducting oxide layer is expected to increase the efficiency of CIGS solar cells. |
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Keywords: | Indium zinc oxide Transparent conducting oxide Window layer Copper indicum gallium selenide Solar cells Sputtering |
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