Microstructural, mechanical and magnetic properties of shape memory alloy Ni55Mn23Ga22 thin films deposited by radio-frequency magnetron sputtering

The near-stoichiometric Ni₂MnGa ferromagnetic alloys are one of the smart materials, that are of a great interest when they are deposited as a thin film by r.f. sputtering. These thin films of shape memory alloys are prospective materials for micro and nanosystem applications. However, the properties of the shape memory polycrystalline thin films depend strongly on their structure and internal stress, which develop during the sputtering process as well as during the post-deposition annealing treatment. In this study, about 1 μm Ni₅₅Mn₂₃Ga₂₂ thin films were deposited in the range 0,45 to 1,2 Pa of Ar pressure and P = 40 to 120 W. Their composition, crystallographic structure, internal stress and stress gradient, indentation modulus, hardness, deflection induced by magnetic field and magnetic properties were systematically studied as a function of the temperature of the silicon substrate ranging from 298 to 873 K and the vacuum annealing treatment at 873 K for 21,6 ks and 36 ks. A silicon wafer having a native amorphous thin SiO_x buffer layer was used as a substrate. This substrate influences the microstructure of the films and blocks the diffusion process during the heat treatment.The crystal structure of the martensitic phase in each film was changed systematically from bct or 10 M or 14 M. In addition, the evolution of the mechanical properties such as mean stress, stress gradient, roughness, hardness and indentation modulus with the temperature (of substrate or of heat treatment) were measured and correlated to crystal structure and morphology changes.Moreover, it has been shown that it is necessary to associate a high temperature (873 K) annealing during a long time (21 ks and 36 ks) to obtain good ferromagnetic properties. Thus, for the well annealed films (36 ks at 873 K) the magnetostrain is about - 170 ppm for a magnetic field of 1 MA m^- 1 applied along the beams.As a conclusion, the response of free-standing magnetic shape memory films to a magnetic field of 0,2 MA m^- 1 depends strongly on the martensitic structure, internal mechanical stress (mean and gradient) and magnetic properties. The free-standing annealed film at 873 K for 36 ks points out a considerable magnetic actuation associated with bct or 10 M or 14 M martensitic structures.