Orientation control of epitaxial Ge thin films growth on SrTiO<sub>3</sub> (100) by ultrahigh vacuum sputtering期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Orientation control of epitaxial Ge thin films growth on SrTiO₃ (100) by ultrahigh vacuum sputtering

Authors:	Wensheng Deng Ming Yang Jianwei ChaiTen It Wong Anyan DuChee Mang Ng Yuanping Feng Shijie Wang

Affiliation:	^a Department of Physics, National University of Singapore, Singapore 117542, Singapore ^b Globalfoundries Singapore Pte. Ltd, 60 Woodlands Ind Park D Street 2, Singapore 738406, Singapore ^c Nanocore, National University of Singapore, Singapore 117543, Singapore ^d Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602, Singapore

Abstract:	We report the orientation control of crystalline Ge (111) and Ge (001) growth on SrTiO₃ (100) substrate by adjusting the temperature of substrate. It is found that the substrate temperature plays an important role for the formation of crystalline Ge with different surface orientations and interfacial chemical configuration during the sputtering process. At 500 °C, Ge (111) with good crystalline quality is formed, while Ge (001) is preferably grown on SrTiO₃ substrate at 650 °C. Our results show the possibility of manipulating the surface orientations during Ge growth on SrTiO₃ by controlling the substrate temperatures.

Keywords:	Ge/SrTiO₃ Epitaxy X-ray diffraction Transmission electron microscopy X-ray photoemission spectroscopy
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