Improvement of on/off ratio in ZnO thin-film transistor by using growth interruptions during metalorganic chemical vapor deposition |
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| Authors: | Jungyol Jo Hyoshik Choi Junho Yun Haemi Kim Ogweon Seo Byeonggon Lee |
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| Affiliation: | aAjou University, Department of Electrical and Computer Engineering, Suwon, Republic of Korea;bNFC, Samsung Advanced Institute of Technology, Suwon, Republic of Korea;cCDA Co., Ltd., Yangjaedong, Seoul, Republic of Korea |
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| Abstract: | We developed a new method to realize enhancement-mode zinc oxide (ZnO) thin-film transistors (TFT) by metalorganic chemical vapor deposition (MOCVD). We used growth interruptions during MOCVD to encourage complete oxidation of deposited ZnO film, where diethylzinc and oxygen were used as sources. With this method, turn-off characteristics were significantly improved, and threshold voltage was shifted to positive voltages. ZnO TFTs grown at 450 °C showed 107 on/off ratio with 18 cm2/V s mobility, and + 5 V threshold voltage. Our data support that the surface layer is also important in determining ZnO TFT characteristics. |
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| Keywords: | Zinc oxide Organometallic vapour deposition Vacancies Surface conductivity |
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