Theoretical analysis of effect of temperature on threshold parameters and field intensity in GaN material based heterostructure |
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| Authors: | S A Gaikwad E P Samuel D S Patil D K Gautam |
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| Affiliation: | (1) Department of Electronics, North Maharashtra University, Jalgaon, 425 001, India |
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| Abstract: | Temperature dependent analysis to achieve better performance by reducing threshold current requirements and field intensity
has been carried out for GaN/AlGaN heterostructure lasers. The mirror loss in the GaN cavity has been obtained as a function
of temperature and cavity length. The quantum efficiency has been deduced for different values of cavity length. Dependence
of recombination rate on band gap and temperature has been investigated. Threshold current density has been deduced for GaN
lasers and effect of temperature on it has been investigated. The near field intensity analysis has been carried out at different
temperatures for 10% aluminum mole fraction in GaN/AlGaN heterostructure lasers. Furthermore, the effective index and FWHM
of near field has been investigated as a function of temperature. It has been deduced from our analysis that temperature has
a dominant effect on the threshold conditions and near field intensity in the wide band gap GaN based lasers. |
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| Keywords: | Field intensity GaN material heterostructure |
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