Pulsed laser deposition of indium antimonide |
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Authors: | R Venkataraghavan K M Satyalakshmi K S R K Rao A K Sreedhar M S Hegde H L Bhat |
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Affiliation: | (1) Department of Physics, Indian Institute of Science, 560 012 Bangalore, India;(2) Solid State and Structural Chemistry Unit, Indian Institute of Science, 560 012 Bangalore, India |
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Abstract: | Single crystalline oriented films of indium antimonide have been grown on cadmium telluride substrates by the pulsed laser
deposition technique. The films were (111) oriented which is the substrate orientation. The composition of the grown films
were found to deviate from that of the target owing to loss of antimony during evaporation. This deviation from stoichiometry
led to film-substrate reaction, resulting in mixed interface. The antimony deficiency in the films were controlled by correcting
the stoichiometry, which led to avoiding mixed interfaces. The stoichiometric films showed good surface morphology and well
defined sharp interfaces. The IR transmission spectrum showed sharp band to band absorption and effective detection in the
MWIR.
Paper presented at the poster session of MRSI AGM VI, Kharagpur, 1995 |
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Keywords: | PLD indium antimonide morphology interface In2Te3 InTe |
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