MEMS高g加速度传感器高过载能力的优化研究

设计的MEMS高g加速度传感器抗高过载能力差，将导致在冲击等恶劣环境中应用时结构易破坏。本文通过分析传感器结构对其抗过载能力的影响，及在高冲击测试中传感器结构损坏情况的统计，提出了一种新颖的优化高g加速度传感器抗高过载能力的方法。该方法是在结构最易断裂的梁根部和端部添加倒角，以分散在冲击作用下传感器结构这些部位受到的应力，进而提高加速度传感器的高过载能力，并从理论仿真分析了该方法的可行性。最后利用Hopkinson杆测试方法对优化前后的加速度传感器进行冲击测试，测试结果表明，加速度计的抗高过载能力从180,000 g提高到240,000g，说明该优化方法显著，明显提高了该类加速度传感器的抗高过载能力，设计的加速度传感器达到了较理想的抗高过载能力。

High overload ability optimization of a MEMS high-g accelerometer

The structure to be measured is easy to destroy if a designed MEMS high-g acceleration sensor has less-overload ability and it is used in harsh impact environment.Through analyzing the effect of a sensor structure on its anti-overload capacity and collecting its structural damage statistics in high impact testing,a new method was put forward,it could optimize the overload-resistant ability of a high-g acceleration sensor.With this method,chamfers were added at root and end of a beam being the part most easi...