| 半导体PbSe薄膜的研究进展 |
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| 引用本文： | 赵跃智,陈长乐,金克新,高国棉.半导体PbSe薄膜的研究进展[J].材料导报,2005,19(7):20-23. |
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| 作者姓名： | 赵跃智 陈长乐 金克新 高国棉 |
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| 作者单位： | 西北工业大学理学院,西安,710072;西北工业大学理学院,西安,710072;西北工业大学理学院,西安,710072;西北工业大学理学院,西安,710072 |
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| 摘 要： | 综述了PbSe薄膜的制备方法,比较了各种制备方法的优点.重点探讨了温度、薄膜厚度和缓冲层对PbSe薄膜质量的影响.概述了PbSe薄膜在红外探测器和激光器方面的应用,指出了PbSe薄膜现存的问题及今后工作的重点和方向.
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| 关 键 词： | PbSe薄膜 制备方法 应用 |
Research Progress of Semiconductor PbSe Thin Films |
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| ZHAO Yuezhi,CHEN Changle,JIN Kexin,GAO Guomian.Research Progress of Semiconductor PbSe Thin Films[J].Materials Review,2005,19(7):20-23. |
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| Authors: | ZHAO Yuezhi CHEN Changle JIN Kexin GAO Guomian |
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| Abstract: | Preparation methods of PbSe thin films are reviewed and their advantages are compared.The effects of temperature,thickness and buffer layers on PbSe thin films are mainly investigated.After sunming up the applications in infrared detectors and lasers,the problems existing in studying PbSe thin films and the development di- rection are pointed out. |
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| Keywords: | PbSe thin films preparation methods application |
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