SiC陶瓷基片的烧结工艺与SiC_p/Al复合材料的制备方法 |
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引用本文: | 王志勇,彭超群,王日初,王小锋,李婷婷,刘兵.SiC陶瓷基片的烧结工艺与SiC_p/Al复合材料的制备方法[J].材料导报,2012(5):36-39. |
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作者姓名: | 王志勇 彭超群 王日初 王小锋 李婷婷 刘兵 |
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作者单位: | 中南大学材料科学与工程学院 |
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基金项目: | 国家民口配套科研项目(MKPT-03-182) |
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摘 要: | 概述了电子封装基片材料的基本性能要求;讨论了SiC陶瓷基片常用的4种烧结工艺,即常压烧结、热压烧结、反应烧结和放电等离子烧结;介绍了SiCp/Al复合材料的制备方法,即搅拌铸造法、无压渗透法、喷射沉积法、粉末冶金法;据此进一步提出了SiC陶瓷基片材料的发展方向。
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关 键 词: | SiC 热导率 烧结工艺 SiCp/Al复合材料 |
Sintering Technologies of SiC Ceramic Substrate and Preparation Methods of SiC_p/Al Composites |
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Affiliation: | WANG Zhiyong,PENG Chaoqun,WANG Richu,WANG Xiaofeng,LI Tingting,LI U Bing(School of Materials Science and Engineering,Central South University,Changsha 410083) |
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Abstract: | The elemental requirements for electronic packaging substrate materials are introduced.Four sintering technologies are analyzed,i.e.pressureless sintering,hot press sintering,reacted sintering and spark plasma sintering.The preparation methods of SiCp/Al composites are described,i.e.stir casting method,pressureless infiltration method,spray deposition method,powder metallurgy method.Future trends are put forward accordingly. |
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Keywords: | SiC thermal conductivity sintering technologies SiCp/Al composites |
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