| TiO2薄膜发展现状及APCVD制备掺氮TiO2性能研究 |
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| 引用本文： | 王薇薇,郭玉,张溪文,韩高荣.TiO2薄膜发展现状及APCVD制备掺氮TiO2性能研究[J].材料导报,2006,20(Z1):57-61,74. |
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| 作者姓名： | 王薇薇 郭玉 张溪文 韩高荣 |
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| 作者单位： | 浙江大学硅材料国家重点实验室,杭州,310027 |
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| 基金项目： | 国家高技术研究发展计划(863计划)，国家自然科学基金 |
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| 摘 要： | 概述了TiO2的国内外发展现状,从原理、改性等方面详细介绍了TiO2的光催化特性,并对TiO2的制备方法进行了总结概括.用APCVD法所做的气体流量系列掺氮TiO2样品进行测试分析发现,氮已经掺入TiO2中,氮的掺杂改善了薄膜表面的亲水性能.
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| 关 键 词： | 光催化性 掺氮 薄膜 |
The Development of TiO2 Films and the Properties of N-doped TiO2 Films Prepared by APCVD |
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| WANG Weiwei,GUO Yu,ZHANG Xiwen,HAN Gaorong.The Development of TiO2 Films and the Properties of N-doped TiO2 Films Prepared by APCVD[J].Materials Review,2006,20(Z1):57-61,74. |
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| Authors: | WANG Weiwei GUO Yu ZHANG Xiwen HAN Gaorong |
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| Abstract: | It summarizes the development of TiO_2 all over the world, and introduces the photocatalysis of TiO_2 in terms of the theory and character factors, and generalizes the preparation methods of TiO_2. The samples of N-doped TiO_2 films prepared by atmosphere pressure chemical vapor deposition are tested and analyzed,and we find that N element exists in the TiO_2 films and the hydrophilicity in the surface is improved after N is doped in the films. |
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| Keywords: | TiO2 APCVD |
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