Bi／Bi2O3晶格复合热电薄膜的制备及其性能研究

利用射频磁控溅射法在玻璃基片上制备Bi／Bi2O3晶格复合热电薄膜，考察了溅射功率对单层Bi薄膜表面粗糙度和热电性能的影响，结果表明，当溅射功率为22W时，薄膜具有最小的表面粗糙度16.3nm，电导率和功率因子分别为2．9×10^4S／m和5．74μV／k^2m，单层Bi薄膜最佳的工作温度为85～105℃。Bi／Bi2O3晶格复合热电薄膜最佳的溅射层数为5层，其电导率和功率因子分别为9．0×10^4S／m和21．0μN／k^2m，分别比单层Bi薄膜提高了2．1倍和2．65倍。

Research on Fabrication and Properties of Bi/Bi2O3 Lattice Compound Thermoelectric Thin Films

Based on the improving the thermoelectric properties with reducing of the dimension of the material by the scale effect, high conductivity of Bi and low conductivity of Bi2O3, and electron two-dimension transmission in conductive layer with insulator, the influence of sputtering power on surface roughness and hemaoeleetrie properties for Bi/Bi2O3 lattice compound thermoelectric thin films on glass substrates prepared by radio-frequency （RF） magnetron sputtering were investigated. When the small surface roughness was 16.3 nm with the sputtering power of 22 W, the conductivity and power factor were 2.9×10^4 S/m and 5.74 μv/k^2m, respectively. The optimum operating temperature for Bi monolayer was in the range from 85 to 105 ℃. The numbers for sputtering layer of Bi/Bi2O3 lattice compound thermoelectric thin films were five, and its electrical conductivity and power factor were 9.0×10^4 S/m and 21.0 μV/k^2m, which were increased by 2.1 times and 2.65 times than the single layer bismuth film, respectively