SiC靶功率密度对无氢掺硅类金刚石薄膜摩擦学性能的影响

采用直流磁控溅射石墨靶、中频磁控溅射碳化硅靶以及离子源辅助的复合沉积技术,制备出膜层质量优异、摩擦因数和磨损率较低的具有不同Si含量的无氢掺硅类金刚石薄膜。使用XPS、拉曼光谱仪、台阶仪、纳米硬度计、SEM、EDS以及球盘式摩擦磨损试验仪测试并表征薄膜的微观结构、力学性能和摩擦学性能。研究表明,该技术能够成功制备出无氢掺硅类金刚石薄膜;随着SiC靶功率密度的增加,薄膜中Si的含量和sp3键的含量逐渐增加,其纳米硬度和弹性模量先增大后减小,摩擦因数由0.277降低至0.066,但其磨损率从6.29×10-11 mm3/Nm增加至1.45×10-9 mm3/Nm;当SiC靶功率密度为1.37W/cm2时,薄膜的纳米硬度与弹性模量分别达到最大值16.82GPa和250.2GPa。

Effect of SiC Target Power Density on Tribological Properties of Nonhydrogenated Silicon Doped Diamondlike Carbon Film

Non-hydrogenated silicon doped DLC film was prepared by DC magnetron sputtering of graphite target,frequency magnetron sputtering of silicon carbide target and ion source compound deposition technique.The performance of Si-DLC films with different Si content were excellent,which have low friction coefficient and wear rate.The microstructure,mechanical property and tribological performance were tested and characterized by XPS,Raman spectrometer,step profiler,nano-indenter,SEM,EDS and ball-on-disc tribometer.The results show that the non-hydrogenated silicon doped DLC film can be successfully prepared by this compound deposition technique.As the power density of SiC target gradually increased,the concentration of Si and the quantity of sp3 bonding increased,and the nano-hardness and Young’s elastic modulus firstly increased at maximum values and then decreased,the friction coefficient reduced from 0.277 to 0.066,but the wear rate increased from 6.29×10-11 mm3/Nm to 1.45×10-9 mm3/Nm.The nano-hardness and elastic modulus of the film reached the maximum,respectively 16.82 GPa and 250.2 Gpa,when the SiC target power the density was 1.37 W/cm2.