| Si-glass-Al阳极键合电流特性及其力学性能 |
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| 引用本文： | 薛永志,胡利方,王浩,李蓉,王文先.Si-glass-Al阳极键合电流特性及其力学性能[J].焊接学报,2019,40(6):71-76,86. |
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| 作者姓名： | 薛永志 胡利方 王浩 李蓉 王文先 |
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| 作者单位： | 太原理工大学 先进镁基材料山西省重点实验室,太原,030024;太原理工大学 先进镁基材料山西省重点实验室,太原 030024;太原理工大学 材料科学与工程学院,太原 030024;太原理工大学 材料科学与工程学院,太原,030024 |
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| 基金项目： | 国家自然科学基金重点资助项目（51405328） |
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| 摘 要： | 采用两步法实现了Si-glass-Al的可靠连接，提出了键合三层晶片的电流-时间模型.键合电流结果表明，两次阳极键合的电流变化规律一致，即先迅速增加至最大值，然后呈指数式下降；发现第二次键合的电流峰值总是大于第一次，结合提出的电流-时间模型，表明键合材料之间因不完全接触而产生的电阻会对电流峰值产生显著影响.利用扫描电镜（SEM）观察Si-glass-Al界面形貌，界面结合良好，在450℃/800 V的条件下，glass-Al及glass-Si界面处Na+耗尽层厚度分别达到了546，820 nm.试样的拉伸强度随着电压的增大而升高，无论是先键合Si还是先键合Al箔，断裂总是发生在第二次键合界面附近或玻璃基体上.
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| 关 键 词： | 电子封装 阳极键合 Si-glass-Al 电流-时间模型 |
| 收稿时间： | 2018/1/15 0:00:00 |
Electric current characteristic and mechanical properties of Si-glass-Al anodic bonding process |
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| XUE Yongzhi,HU Lifang,WANG Hao,LI Rong and WANG Wenxian.Electric current characteristic and mechanical properties of Si-glass-Al anodic bonding process[J].Transactions of The China Welding Institution,2019,40(6):71-76,86. |
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| Authors: | XUE Yongzhi HU Lifang WANG Hao LI Rong and WANG Wenxian |
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| Affiliation: | 1.Shanxi Key Laboratory of Advanced Magnesium-based Materials, Taiyuan University of Technology, Taiyuan 030024, China2.Shanxi Key Laboratory of Advanced Magnesium-based Materials, Taiyuan University of Technology, Taiyuan 030024, China;College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China3.College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China |
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| Abstract: | In this paper, a novel current-time model of two-step triple-stack anodic bonding was proposed, and Si-glass-Al was successfully bonded together. The results indicate that the current variation of two bonding process is similar, the currents increase rapidly to the maximum value and then decreases exponentially. The peak current of the second step bonding is always larger than the first step, which indicates resistance produced by incomplete contact between bonding materials has a significant effect on peak current. SEM was conducted to investigate the interfacial structure of the Si-glass-Al samples. At 450℃/800 V, the thickness of Na+ depletion layer at the glass-Al and glass-Si interfaces is 546 and 820 nm, respectively. The tensile strength of the sample increases with the increase of voltage. Whether Si or Al was bonded first, fracture always occurs near the second step bonding interface or the glass substrate. |
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| Keywords: | package anodic bonding Si-glass-Al current-time model |
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