| W-Cu电子封装材料的气密性 |
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| 引用本文： | 王志法,刘正春.W-Cu电子封装材料的气密性[J].中国有色金属学报,1999,9(2):323-326. |
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| 作者姓名： | 王志法 刘正春 |
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| 作者单位： | 中南工业大学材料科学与工程系 |
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| 基金项目： | 湖南省科委1998年重点科研项目 |
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| 摘 要： | 分析了传统熔渗法生产的ＷＣｕ材料气密性差的工艺因素，采用加入一定数量的诱导铜的工艺方法进行压型，通过调整成型压力，使生坯中的Ｗ含量达到电子封装ＷＣｕ１５含钨量的标准，其余的Ｃｕ在熔渗时渗入。实验表明，加入１％～２．５％的诱导铜的生坯在１３５０℃熔渗１．５ｈ，其气密性可以达到满意的效果。
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| 关 键 词： | W-Cu合金 电子封装材料 气密性 诱导铜 |
HERMETICITY OF WCu COMPOSITES FOR SEMICONDUCTOR PACKAGE |
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| Wang Zhifa,Liu
Zhengchun and Jiang Guoshen.HERMETICITY OF WCu COMPOSITES FOR SEMICONDUCTOR PACKAGE[J].The Chinese Journal of Nonferrous Metals,1999,9(2):323-326. |
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| Authors: | Wang Zhifa Liu
Zhengchun and Jiang Guoshen |
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| Affiliation: | Wang Zhifa,Liu
Zhengchun and Jiang Guoshen Department of Materials Science and Engineering,Central South
University of Technology,Changsha 410083,P. R. China |
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| Abstract: | The factors resulting in
inferior hermeticity of WCu composites made by conventional process were analyzed and then
a new process was introduced. Firstly, a small amount of inducing copper powder was mixed
with the W powder. Then the mixed powder was directly pressed into green compacts of
required density. Finally the balance of the copper was added by infiltrating method. It is
indicated that when the compact contains 1%2.5%(mass fraction) inducing copper and is
infiltrated at 1 350 for 1.5 h, the hermeticity of the material is fairly satisfactory. |
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| Keywords: | WCu compositehermeticityinducing copperinfiltration |
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